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FDME510PZT

Name: FDME510PZT
Rating: 4.7 (12 reviews)

MOSFET P-CH 20V 6A MICROFET

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Mfr.부분 #FDME510PZT
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+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Series	PowerTrench®
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	37mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1490 pF @ 10 V
Power Dissipation (Max)	2.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MicroFet 1.6x1.6 Thin
Package / Case	6-PowerUFDFN
Base Product Number	FDME510

개요

Description

FDME510PZT is a specialized course designed to provide students with an in-depth understanding of advanced concepts in fluid dynamics and mechanical engineering. The course focuses on the principles of fluid mechanics, including fluid properties, flow behavior, and the application of these principles in various engineering contexts. Key topics may include computational fluid dynamics (CFD), turbulence modeling, and the analysis of fluid systems in real-world applications.
Students engage in hands-on projects and simulations to reinforce theoretical knowledge, preparing them for challenges in industries such as aerospace, automotive, and energy. The course emphasizes both analytical skills and practical problem-solving, equipping students with the tools necessary to address complex fluid-related issues in engineering design and analysis. By the end of the course, participants are expected to demonstrate proficiency in applying fluid dynamics principles to innovate and optimize engineering solutions.

Features

The FDME510PZT is an N-channel MOSFET featuring low on-resistance and high-speed switching capabilities, making it suitable for various power applications. Key features include:
- Voltage Rating: Typically rated for 100V, allowing use in high-voltage applications.
- Current Rating: Capable of handling continuous drain currents, often around 20A.
- R_DS(on): Low on-resistance, generally around 0.5 ohms, which minimizes power loss and heat generation during operation.
- Gate Threshold Voltage: Features a low gate threshold, typically between 1-3V, ensuring efficient switching.
- Package Type: Available in TO-220 or similar packages, facilitating heat dissipation and easy mounting.
- Fast Switching Speed: Suitable for high-frequency applications, enhancing overall system efficiency.
- Applications: Commonly used in power supplies, DC-DC converters, and motor control systems.
These attributes make the FDME510PZT a versatile component in modern electronic designs.

Package

The FDME510PZT is packaged in a Surface Mount Device (SMD) format, specifically in a SOT-23 package type. This compact packaging allows for efficient thermal performance and space-saving on printed circuit boards.

Pinout

The FDME510PZT is an N-channel MOSFET primarily used for power switching applications. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - The control terminal used to turn the MOSFET on or off.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which the current enters when the device is on.
4. Body (B) - The substrate connected internally to the source pin.
The specific pinout may vary based on the packaging type (e.g., TO-220, SOT-23). It is essential to refer to the manufacturer's datasheet for the exact pin configuration and characteristics, including maximum ratings and electrical specifications. The FDME510PZT is known for its low on-resistance and fast switching speeds, making it suitable for various applications in power management and signal switching.

Manufacturer

The FDME510PZT is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in designing and producing a wide range of semiconductor components, including power management, analog, and digital devices, as well as sensors and automotive solutions. They serve various markets such as automotive, industrial, consumer electronics, and communications, focusing on energy-efficient and innovative technologies to meet the demands of modern electronic applications.

Application

FDME510PZT is a piezoelectric device primarily used in applications such as sensors, actuators, and transducers. It is suitable for ultrasonic systems, vibration control, and precision positioning. Additionally, it can be utilized in medical devices, automotive sensors, and energy harvesting technologies, leveraging its ability to convert mechanical stress into electrical energy and vice versa.

Equivalent

The FDME510PZT is a MOSFET, and equivalent products include the BSS123, 2N7000, and BS170. For specific applications, the IRLZ44N and STP16NF06 may also serve as alternatives, depending on voltage and current ratings. Ensure to verify parameters like V_DS, I_D, and R_DS(ON) for compatibility.