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FDMS86101DC
MOSFET N-CH 100V 14.5A DLCOOL56
- 제조업체
- Mfr.부분 #FDMS86101DC
- 패키지 PowerTDFN-8
- 데이터시트
- 재고 있음5887
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Dual Cool™, PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 14.5A (Ta), 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 7.5mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 44 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3135 pF @ 50 V |
| PowerDissipation(Max) | 3.2W (Ta), 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
개요
Description
Features
1. Voltage Rating: It typically offers a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: It can handle continuous drain currents up to approximately 50A, allowing for robust operation in demanding environments.
3. RDS(on): The device has a low on-resistance (R_DS(on)), typically around 8.5 mΩ, which contributes to reduced power loss and improved efficiency during operation.
4. Fast Switching: It provides fast switching capabilities, ideal for applications requiring quick response times.
5. Thermal Performance: The MOSFET features good thermal performance, with a maximum junction temperature of 150°C, allowing for reliable operation under high thermal stress.
6. Package Type: It is available in a DPAK surface-mount package, facilitating efficient thermal dissipation and easy integration into circuit designs.
Overall, the FDMS86101DC is suitable for applications such as DC-DC converters, synchronous rectification, and motor control.
Package
Pinout
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
7. Drain 1 (D1): Common drain for both MOSFETs.
8. Source 1 (S1): Common source for both MOSFETs.
9. Gate 1 (G1): Common gate for both MOSFETs.
10. Gate 2 (G2): Additional control for the second MOSFET.
The FDMS86101DC is commonly used in applications such as power management and load switching due to its low R_DS(on) and high efficiency.
Manufacturer
Application
Equivalent
배송
배송 방법We
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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