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FDMS86163P
MOSFET P-CH 100V 7.9A/50A 8PQFN
- 제조업체
- Mfr.부분 #FDMS86163P
- 패키지 PowerTDFN-8
- 데이터시트
- 재고 있음2892
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365 일 보장
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 7.9A (Ta), 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 22mOhm @ 7.9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 59 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4085 pF @ 50 V |
| PowerDissipation(Max) | 2.5W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
개요
Description
This device is commonly used in DC-DC converters, battery management systems, and load switching applications. Its compact package design allows for space-saving layouts in electronic circuits. Additionally, the FDMS86163P's thermal characteristics make it suitable for high-density applications where heat dissipation is critical.
Engineers appreciate the MOSFET's performance in switching losses and its ability to handle significant load currents, contributing to overall system efficiency. Always refer to the manufacturer's datasheet for detailed specifications, thermal characteristics, and application guidelines to ensure optimal performance in specific designs.
Features
1. Low On-Resistance: It has a low R_DS(on) value, enhancing efficiency and reducing power loss during operation.
2. High Voltage Rating: Typically rated for 30V, it is suitable for a range of applications, including DC-DC converters and power management circuits.
3. Fast Switching Speed: This MOSFET offers rapid switching capabilities, making it ideal for high-frequency applications.
4. Thermal Performance: It has a robust thermal performance, allowing for better heat dissipation and improved reliability.
5. Compact Package: Available in a compact SO-8 package, it facilitates space-saving designs in various electronic circuits.
6. Enhanced Durability: Designed to handle high pulsed currents, it ensures longevity in demanding environments.
These features make the FDMS86163P suitable for use in consumer electronics, industrial applications, and automotive systems.
Package
Pinout
The pin configuration is as follows:
1. G1 (Gate 1) - Controls the first MOSFET.
2. D1 (Drain 1) - Drain terminal of the first MOSFET.
3. S1 (Source 1) - Source terminal of the first MOSFET.
4. G2 (Gate 2) - Controls the second MOSFET.
5. D2 (Drain 2) - Drain terminal of the second MOSFET.
6. S2 (Source 2) - Source terminal of the second MOSFET.
7. Drain and Source Common - For parallel configurations or certain applications.
8. N/C (No Connect) - Not connected to internal circuitry.
This component is often used for its low on-resistance and fast switching capabilities, enhancing overall system efficiency.
Manufacturer
Application
Equivalent
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