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FDMS8D8N15C
MOSFET N-CH 150V 12.2A/85A 8PQFN
- 제조업체
- Mfr.부분 #FDMS8D8N15C
- 패키지 PQFN-8
- 데이터시트
- 재고 있음2829
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배송 준비 24 시간
365 일 보장
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 12.2A (Ta), 85A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 8V, 10V |
| RdsOn(Max)@IdVgs | 8.8mOhm @ 45A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3600 pF @ 75 V |
| PowerDissipation(Max) | 2.7W (Ta), 132W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
개요
Description
This device is commonly utilized in power supplies, motor drives, and other high-efficiency circuits. The FDMS8D8N15C is recognized for its fast switching capabilities, which enhance overall circuit performance. Its compact package design facilitates integration into space-constrained applications.
When using the FDMS8D8N15C, it's essential to consider its thermal characteristics, gate threshold voltage (V_GS(th)), and safe operating areas to ensure reliable operation in the intended application. The datasheet provides detailed specifications and guidelines for optimal usage.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 15V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (ID) up to 8A, accommodating moderate power demands.
3. RDS(on): It has a low on-resistance (RDS(on)) of approximately 22 mΩ at VGS = 10V, ensuring minimal power loss during operation.
4. Fast Switching: The MOSFET offers fast switching speeds, making it ideal for applications like switching regulators and motor drivers.
5. Thermal Performance: With a thermal resistance (RθJA) of 62°C/W, it provides good thermal management, enhancing reliability.
6. Package: It typically comes in a compact SO-8 package, suitable for space-constrained designs.
Overall, the FDMS8D8N15C is well-suited for applications requiring efficient power management and compact design.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which current flows to the load.
3. Source (S) - The terminal through which the current exits the MOSFET.
Typically, the pinout is arranged as:
1. Gate
2. Drain
3. Source
4. Source (for dual configuration)
5. Drain
6. Gate (for dual configuration)
7. Source (for dual configuration)
8. Drain (for dual configuration)
In summary, the FDMS8D8N15C is designed for high-efficiency switching applications, such as in DC-DC converters and power management systems.
Manufacturer
Application
Equivalent
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