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FDN335N
MOSFET N-CH 20V 1.7A SUPERSOT3
- 제조업체
- Mfr.부분 #FDN335N
- 패키지 SSOT-3
- 데이터시트 FDN335N DataSheet
- 재고 있음4791
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 1.7A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 70mOhm @ 1.7A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 310 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
개요
Description
Students can expect to engage with core content through readings, discussions, and assessments designed to deepen their understanding of the subject matter. By the end of the course, participants should have a clearer grasp of fundamental principles, enabling them to apply this knowledge in practical contexts or advanced studies.
For precise details, including objectives, prerequisites, and specific content, it’s advisable to consult the course syllabus or the institution offering FDN335N.
Features
1. Low R_DS(on): Ensures minimal conduction losses, leading to higher efficiency.
2. High Voltage Rating: Typically around 30V, making it suitable for various circuit applications.
3. Fast Switching Speed: Enables quick response times, beneficial for high-frequency applications.
4. Thermal Stability: Good thermal characteristics allow for reliable operation under varying load conditions.
5. Low Gate Charge (Q_G): Reduces drive power requirements, simplifying circuit design.
6. Compact Package: Often available in DPAK or TO-220 packages, which aids in space-efficient designs.
These features make the FDN335N an ideal choice for applications in power supplies, motor drives, and RF amplifiers.
Package
Pinout
1. Gate1 (G1): Control terminal for the first N-channel MOSFET.
2. Drain1 (D1): Output terminal for the first N-channel MOSFET.
3. Source1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate2 (G2): Control terminal for the second N-channel MOSFET.
5. Drain2 (D2): Output terminal for the second N-channel MOSFET.
6. Source2 (S2): Source terminal for the second N-channel MOSFET.
The FDN335N is designed for low-voltage applications, offering enhanced efficiency and reduced on-resistance, making it suitable for power management, switching, and amplification tasks in electronic circuits. Check the datasheet for specific electrical characteristics and ratings.
Manufacturer
Application
Equivalent
배송
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