이미지는 참조용만

FDN359BN

Name: FDN359BN
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 2.7A SUPERSOT3

제조업체
Mfr.부분 #FDN359BN
패키지 SSOT-3
데이터시트 FDN359BN DataSheet
재고 있음7312

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package	Tape & Reel (TR),Cut Tape (CT)
Series	PowerTrench®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	2.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	46mOhm @ 2.7A, 10V
Vgs(th)(Max)@Id	3V @ 250µA
GateCharge(Qg)(Max)@Vgs	7 nC @ 5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	650 pF @ 15 V
PowerDissipation(Max)	500mW (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3

개요

Description

FDN359BN is a specialized course focusing on foundational concepts in financial data analysis and business networking. The curriculum typically covers essential topics such as data interpretation, financial modeling, and the application of analytical tools to inform business decisions. Students are introduced to various financial instruments, market dynamics, and the use of technology in financial analysis. The course aims to equip learners with the skills needed to analyze financial data effectively, develop insights for strategic planning, and understand the implications of financial decisions within a broader business context. By the end of the course, participants should be able to apply quantitative methods and analytical techniques to real-world financial scenarios, fostering both critical thinking and practical application in finance-related fields.

Features

The FDN359BN is a versatile, high-performance semiconductor device, typically utilized in various electronic applications. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: Capable of handling high voltages, typically around 30V.
3. Current Rating: Supports continuous current rating, often up to 15A.
4. R_DS(on): Low on-resistance, leading to efficient power management and reduced heat generation.
5. Gate Threshold Voltage: Suitable for low-voltage drive applications, with a threshold voltage generally ranging from 1V to 2V.
6. Switching Speed: Fast switching capabilities, making it ideal for high-frequency applications.
7. Package Type: Usually available in standard surface-mount packages, facilitating easy integration into circuits.
These features make the FDN359BN suitable for applications such as power switching, load driving, and other electronic control systems. Always consult the specific datasheet for precise specifications and characteristics.

Package

The FDN359BN is typically packaged in a SOT-23 package type. This surface-mount package is commonly used for low-power applications due to its compact size and efficiency.

Pinout

The FDN359BN is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 3 pins.
Pin Functions:
1. Gate (G): This pin controls the transistor's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current exits the transistor. It connects to the load in a circuit.
3. Source (S): This is the terminal through which current enters the transistor. It is typically connected to ground or a lower potential in a circuit.
The FDN359BN is commonly used for switching and amplification in electronic applications due to its low on-resistance and fast switching capabilities.

Manufacturer

The FDN359BN is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of energy-efficient solutions, including analog, digital, and mixed-signal integrated circuits. The company caters to various sectors, including automotive, industrial, and consumer electronics, focusing on innovations that promote sustainable energy use and enhance performance. Established in 1999, ON Semiconductor has grown through strategic acquisitions and a commitment to advancing semiconductor technology.

Application

FDN359BN is a high-performance N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and load switching. It is ideal for use in automotive, industrial, and consumer electronics due to its low on-resistance and high-speed switching capabilities.

Equivalent

The FDN359BN is a dual N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000. These alternatives have similar specifications for low-voltage applications, but always verify specific electrical characteristics and package types to ensure compatibility for your particular use case.