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FDN361BN
MOSFET N-CH 30V 1.4A SUPERSOT3
- 제조업체
- Mfr.부분 #FDN361BN
- 패키지
- 데이터시트 FDN361BN DataSheet
- 재고 있음4047
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사양
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 193 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | FDN361 |
개요
Description
Features
1. Voltage Rating: Typically, it has a maximum drain-source voltage (Vds) of 30V, allowing it to handle moderate power levels.
2. Current Rating: It can support continuous drain currents up to approximately 60A, making it suitable for high-current applications.
3. Rds(on): It boasts a low on-resistance (Rds(on)), typically around 10-15 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is generally in the range of 1-3V, enabling it to turn on effectively with low gate drive voltage.
5. Fast Switching Speed: The FDN361BN features rapid switching capabilities, ideal for high-frequency applications.
6. Thermal Resistance: It has a low thermal resistance, allowing for effective heat dissipation, which enhances reliability and performance.
These characteristics make the FDN361BN ideal for use in power management, motor control, and switching applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to ground or the lower potential in the circuit, completing the current path.
The FDN361BN is commonly used for low-side switching applications in various electronic circuits.
Manufacturer
Application
Equivalent
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