FDN5618P

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FDN5618P

MOSFET P-CH 60V 1.25A SUPERSOT3

  • 제조업체
  • Mfr.부분 #FDN5618P
  • 패키지 SSOT-3
  • 데이터시트
  • 재고 있음6105

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 1.25A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 170mOhm @ 1.25A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 13.8 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 430 pF @ 30 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

개요

Description

FDN5618P is a course designed to introduce students to the principles and practices of financial decision-making and analysis in organizations. It covers essential topics such as financial reporting, budgeting, investment analysis, and risk management. The course emphasizes understanding financial statements, evaluating financial health, and making informed decisions based on quantitative and qualitative data.
Students will learn to utilize various financial tools and techniques to assess business performance, project future financial scenarios, and support strategic planning. Practical case studies and real-world examples are often incorporated to bridge theory with application, enhancing critical thinking and problem-solving skills.
Overall, FDN5618P aims to equip students with a solid foundation in financial management, preparing them for roles in finance, accounting, and related fields.

Features

The FDN5618P is a high-performance, N-channel MOSFET designed for various applications, including power management and voltage regulation. Key features include:
1. Low On-Resistance (RDS(on)): Ensures efficient power conduction, minimizing heat generation and enhancing performance in high-current applications.
2. High Voltage Rating: Capable of withstanding significant voltages, making it suitable for a range of demanding applications.
3. Fast Switching Speed: Facilitates rapid switching operations, improving efficiency in switching power supplies and other fast-switching applications.
4. Low Gate Charge (Qg): Reduces the driving power requirements, allowing for lower energy consumption in control circuits.
5. Thermal Stability: Designed to operate reliably across a wide temperature range, ensuring durability in various environments.
6. Compact Package: Available in a small footprint package, aiding in space-constrained designs.
Overall, the FDN5618P is ideal for automotive, consumer electronics, and industrial systems where efficiency and thermal management are critical.

Package

The FDN5618P is typically packaged in a SOT-23 (Small Outline Transistor) package type, which is a compact, surface-mount package used for various electronic components.

Pinout

The FDN5618P is a dual N-channel MOSFET in a SOT-23 package, commonly used for low-side switching applications. It features a total of 6 pins. The pin configuration is as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): The source terminal for the first MOSFET, typically connected to ground in low-side configurations.
3. Drain 1 (D1): The drain terminal for the first MOSFET, connected to the load.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): The source terminal for the second MOSFET, also usually connected to ground.
6. Drain 2 (D2): The drain terminal for the second MOSFET, connected to a different load.
This configuration allows for independent control of two loads, making the FDN5618P suitable for various applications in power management and signal switching.

Manufacturer

The FDN5618P is manufactured by ON Semiconductor, a global semiconductor company based in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, sensor, and discrete components. The company serves various industries such as automotive, industrial, consumer, and communications, providing innovative technologies to meet the demands of modern electronics. ON Semiconductor focuses on energy-efficient solutions and sustainability, making it a significant player in the semiconductor market.

Application

FDN5618P is commonly used in applications such as low-noise amplification, RF front-end modules, and analog signal processing. Its high-frequency performance makes it suitable for telecommunications, radar systems, and high-speed data transmission. Additionally, it finds use in portable electronics and consumer devices, where efficient power management and compact design are crucial.

Equivalent

The FDN5618P is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170, among others. For specific applications or requirements, check the datasheet for parameters like voltage, current ratings, and package type to ensure compatibility.

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