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FDP61N20
POWER FIELD-EFFECT TRANSISTOR, 6
- 제조업체
- Mfr.부분 #FDP61N20
- 패키지 TO-220-3
- 데이터시트 FDP61N20 DataSheet
- 재고 있음7944
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사양
| Package | Bulk |
| Series | UniFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 61A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 41mOhm @ 30.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 75 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3380 pF @ 25 V |
| PowerDissipation(Max) | 417W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
개요
Description
With a low on-resistance (R_DS(on)), typically around 0.06 ohms, FDP61N20 ensures efficient conduction, reducing power loss and heat generation during operation. Its fast switching capabilities enable high-frequency applications, improving overall system efficiency. The device is housed in a TO-220 package, which facilitates effective thermal dissipation.
FDP61N20 is ideal for designs requiring robust performance and reliability, such as in DC-DC converters, inverters, and other power management systems. Its combination of high voltage, current handling, and efficiency makes it a popular choice among engineers working in the field of power electronics.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 200V, allowing it to handle high voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 61A, suitable for high current applications.
3. R_DS(on): Low on-resistance (typically around 0.065 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) ensures efficient switching performance.
5. Fast Switching: Designed for fast switching speeds, making it ideal for high-frequency applications.
6. Thermal Performance: Good thermal stability and performance, with the ability to dissipate heat effectively.
7. Package Type: Available in TO-220 and DPAK packages, providing flexibility in design and heat dissipation.
These features make the FDP61N20 a robust choice for applications in power supplies, DC-DC converters, and motor drives.
Package
Pinout
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the current leaves the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the current enters the MOSFET.
The FDP61N20 is characterized by a maximum drain-source voltage (V_DS) of 200V and a maximum continuous drain current (I_D) of 61A, making it suitable for high-power applications such as switching power supplies and motor control.
Manufacturer
Application
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