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FDPF20N50FT
POWER FIELD-EFFECT TRANSISTOR, 2
- 제조업체
- Mfr.부분 #FDPF20N50FT
- 패키지
- 데이터시트 FDPF20N50FT DataSheet
- 재고 있음15137
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사양
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | UniFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 260mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3390 pF @ 25 V |
| PowerDissipation(Max) | 38.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
개요
Description
Key characteristics include a low on-resistance (RDS(on)), which minimizes power losses during operation, and fast switching speeds that enhance overall performance in high-frequency applications. The device is housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on circuit boards.
This MOSFET is often used in applications requiring high voltage and current handling, such as industrial power supplies, automotive systems, and renewable energy systems like solar inverters. Its robust performance and reliability make it a popular choice among engineers and designers in the power electronics field.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of 20A, providing robust performance in various applications.
3. R_DS(on): The on-resistance is low, typically around 0.5Ω at V_GS = 10V, which reduces power losses during operation.
4. Fast Switching: The device is optimized for fast switching, enhancing efficiency in high-frequency applications.
5. Package: It is available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Commonly used in power supplies, motor drives, and industrial control systems.
These features make the FDPF20N50FT suitable for demanding applications requiring reliability and efficiency.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is turned on. It is connected to the load in the circuit.
3. Source (S): This is the terminal where the current exits the MOSFET. It is typically connected to ground in low-side switching applications.
The FDPF20N50FT is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 20A. It is commonly used in power management and switching applications.
Manufacturer
Application
Equivalent
1. IRF840
2. STP20NM50
3. MTP20N50E
4. FQD20N50
5. AUIRF840
Check specific datasheets for exact specifications, including Rds(on), gate threshold voltage, and package type to ensure compatibility.
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