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FDS2670
MOSFET N-CH 200V 3A 8SOIC
- 제조업체
- Mfr.부분 #FDS2670
- 패키지
- 데이터시트 FDS2670 DataSheet
- 재고 있음5701
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사양
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1228 pF @ 100 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS26 |
개요
Description
Features
1. Low On-Resistance: Provides efficient performance with minimal power loss during operation.
2. High Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for various applications.
3. Fast Switching Speed: Enables rapid switching, enhancing efficiency in high-frequency applications.
4. Compact Package: Available in a surface-mount package (e.g., SO-8), facilitating easy integration into circuit designs.
5. Thermal Management: Features thermal resistance specifications that help manage heat dissipation during operation.
6. Low Gate Charge: Reduces the power needed for driving the gate, improving overall system efficiency.
7. High Reliability: Designed with robust characteristics to ensure dependable performance in demanding environments.
These features make the FDS2670 suitable for a range of applications, including power supplies, motor drivers, and DC-DC converters.
Package
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1) - Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2) - Drain terminal for the second N-channel MOSFET.
7. Common Source (CS) - Provides a common source connection for both MOSFETs.
8. Internally Connected - Some pins may be internally connected, enhancing thermal performance and ease of use.
The FDS2670 is often used in power management applications due to its low on-resistance and fast switching capabilities.
Manufacturer
Application
Equivalent
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DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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