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FDS6675BZ
MOSFET P-CH 30V 11A 8SOIC
- 제조업체
- Mfr.부분 #FDS6675BZ
- 패키지 SOIC-8
- 데이터시트 FDS6675BZ DataSheet
- 재고 있음4452
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365 일 보장
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 13mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2470 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
개요
Description
Key specifications include a maximum drain-source voltage (Vds) rating, which allows it to handle substantial voltage levels, and a high continuous drain current (Id) rating, making it suitable for high-power applications. The device is housed in a compact package, facilitating easy integration into circuit designs.
Additionally, the FDS6675BZ is known for its fast switching speed, enabling efficient performance in high-frequency applications. Its robust thermal characteristics ensure reliable operation under varying conditions. Overall, the FDS6675BZ is a versatile component widely used in electronics for reliable and efficient power management solutions.
Features
1. Low R_DS(on): This MOSFET boasts low on-state resistance, ensuring minimal power loss and improved thermal performance during operation.
2. High Speed Switching: Ideal for high-frequency applications, it allows for rapid switching, enhancing overall efficiency.
3. High Voltage Rating: Supports up to 30V, making it suitable for various voltage applications.
4. Compact Package: It comes in a compact, surface-mount package (SOT-23), allowing for space-efficient designs.
5. Gate Threshold Voltage: Features a low gate threshold voltage, ensuring compatibility with low-voltage drive signals.
6. Robust Performance: Designed to handle high currents, it is suitable for applications such as power management, DC-DC converters, and motor drives.
Overall, the FDS6675BZ is a versatile component ideal for modern electronic designs requiring efficient power management solutions.
Package
Pinout
1. Gate 1 (G1): Controls the first MOSFET (Q1).
2. Source 1 (S1): Source terminal for the first MOSFET (Q1).
3. Drain 1 (D1): Drain terminal for the first MOSFET (Q1).
4. Gate 2 (G2): Controls the second MOSFET (Q2).
5. Source 2 (S2): Source terminal for the second MOSFET (Q2).
6. Drain 2 (D2): Drain terminal for the second MOSFET (Q2).
7. Common Source (CS): Common source connection for both MOSFETs.
8. N/C (Not Connected): No internal connection.
These MOSFETs are often used in power management applications, including DC-DC converters and load switching.
Manufacturer
Application
Equivalent
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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