FDS6681Z

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FDS6681Z

MOSFET P-CH 30V 20A 8SOIC

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사양

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 20A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 4.6mOhm @ 20A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 260 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 7540 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

개요

Description

FDS6681Z is a high-performance, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching. It features a low on-resistance, which minimizes power loss and heat generation during operation, making it suitable for efficient power conversion in devices like DC-DC converters, motor drivers, and power amplifiers.
Key specifications typically include a high voltage rating, low gate threshold voltage, and fast switching capabilities, allowing it to handle significant current levels while maintaining thermal stability. The device's compact packaging and enhanced reliability make it ideal for space-constrained applications in consumer electronics and automotive systems.
FDS6681Z is often noted for its ease of integration into circuit designs and its ability to improve overall system efficiency. Users should refer to the datasheet for detailed electrical characteristics, thermal management guidelines, and recommended operating conditions to ensure optimal performance in their specific applications.

Features

The FDS6681Z is a power MOSFET designed for high-efficiency switching applications. Key features include:
1. Type: N-channel enhancement mode MOSFET.
2. Voltage Rating: 30V maximum drain-source voltage (Vds).
3. Current Rating: Capable of handling continuous drain current up to 90A.
4. Rds(on): Low on-resistance, typically around 5.4 mΩ, facilitating reduced conduction losses.
5. Gate Threshold Voltage: Suitable for low-voltage drive applications, with a gate threshold voltage (Vgs) ranging from 1V to 3V.
6. Package: Available in a DPAK package for efficient thermal management and space-saving.
7. Fast Switching: Optimized for fast switching speeds, making it ideal for applications such as DC-DC converters, power management, and motor control.
8. Thermal Resistance: Low thermal resistance ensures effective heat dissipation.
These features make the FDS6681Z suitable for various applications in consumer electronics, automotive, and industrial sectors.

Package

The FDS6681Z is typically packaged in a SO-8 (Small Outline 8-lead) package type. This surface-mount package is commonly used for its compact size and efficient thermal performance in various electronic applications.

Pinout

The FDS6681Z is a dual N-channel MOSFET housed in a 8-lead SOIC (Small Outline Integrated Circuit) package. It features a total of 8 pins.
The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Gate of the first N-channel MOSFET.
2. Drain 1 (D1) - Drain of the first N-channel MOSFET.
3. Source 1 (S1) - Source of the first N-channel MOSFET.
4. Source 2 (S2) - Source of the second N-channel MOSFET.
5. Drain 2 (D2) - Drain of the second N-channel MOSFET.
6. Gate 2 (G2) - Gate of the second N-channel MOSFET.
7. Drain 3 (D3) - Common Drain connection (typically not used).
8. NC (Not Connected) - Not connected internally.
The FDS6681Z is commonly used in power management applications due to its low R_DS(on) and fast switching capabilities.

Manufacturer

The FDS6681Z is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for producing a wide range of semiconductor products, including MOSFETs, diodes, and power management solutions. The company specialized in analog and mixed-signal devices, catering to various industries such as automotive, consumer electronics, and industrial applications. Following its acquisition by ON Semiconductor in 2016, the combined entity expanded its offerings and market presence, focusing on energy-efficient solutions and advanced semiconductor technologies.

Application

The FDS6681Z is a dual N-channel MOSFET primarily used in applications like DC-DC converters, power management systems, and load switching. Its features make it suitable for high-efficiency power supply designs, battery management systems, and motor control applications in consumer electronics, automotive, and industrial devices.

Equivalent

The FDS6681Z is a dual N-channel MOSFET. Equivalent products include the BSS123, IRF3708, and AOD4184. Always verify specifications such as voltage, current ratings, and package type for compatibility in your specific application.

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