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FDS8958A
POWER FIELD-EFFECT TRANSISTOR, 7
- 제조업체
- Mfr.부분 #FDS8958A
- 패키지 SOIC-8
- 데이터시트 FDS8958A DataSheet
- 재고 있음2431
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365 일 보장
RFQ 및더 많은 할인
사양
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 7A, 5A |
| RdsOn(Max)@IdVgs | 28mOhm @ 7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 575pF @ 15V |
| Power-Max | 900mW |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
The FDS8958A is housed in a compact package, which aids in space-saving designs. Its fast switching speed and low gate charge facilitate minimal power loss during operation. Furthermore, the MOSFET is characterized by high thermal performance, allowing for reliable operation over a range of temperatures.
Overall, the FDS8958A is favored in various electronic designs for its efficiency, thermal management, and compact size, making it an essential component in modern power electronics.
Features
1. Low On-Resistance: It offers a low R_DS(on), which minimizes power loss and improves efficiency in applications such as power supplies and battery management systems.
2. High-Speed Switching: The device supports fast switching speeds, making it suitable for high-frequency applications.
3. Enhanced Thermal Performance: It has a robust thermal resistance, allowing it to operate efficiently at elevated temperatures.
4. Low Gate Charge: Reduced gate charge improves switching performance and reduces drive power requirements.
5. Dual Configuration: The package contains two MOSFETs, enabling compact designs and facilitating parallel configurations for higher current applications.
6. Compact Package: Available in a small footprint, which is ideal for space-constrained applications.
These features make the FDS8958A suitable for use in DC-DC converters, motor controls, and other power switching applications.
Package
Pinout
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Source 1 (S1): Connects to the source of the first N-channel MOSFET.
3. Drain 1 (D1): Connects to the drain of the first N-channel MOSFET.
4. Source 2 (S2): Connects to the source of the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the drain of the second N-channel MOSFET.
6. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
7. Common Source (CS): Used for the common source connection.
8. NC (No Connection): Not connected internally, can be left floating.
This device is typically used for load switching and power management applications due to its low on-resistance and high efficiency.
Manufacturer
Application
Equivalent
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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