FERD40H100SG-TR

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FERD40H100SG-TR

DIODE RECT 100V 40A D2PAK

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365 일 보장

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사양

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DiodeType FERD (Field Effect Rectifier Diode)
Voltage-DCReverse(Vr)(Max) 100 V
Current-AverageRectified(Io) 40A
Voltage-Forward(Vf)(Max)@If 705 mV @ 40 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current-ReverseLeakage@Vr 190 µA @ 100 V
MountingType Surface Mount
Package/Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SupplierDevicePackage D²PAK

개요

Description

The FERD40H100SG-TR is a high-performance N-channel MOSFET designed for various power management applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 40A, making it suitable for high-voltage and high-current operations. The device offers low on-resistance (RDS(on)), enhancing efficiency and reducing heat generation during operation.
Due to its fast switching capabilities, it is ideal for applications in power supplies, motor drives, and converters. The MOSFET is available in a compact TO-220 package, facilitating easy heat dissipation and PCB mounting. Its robustness and efficient performance make the FERD40H100SG-TR a popular choice among engineers for designing reliable and efficient power circuits.

Features

The FERD40H100SG-TR is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 100V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain currents (I_D) of approximately 40A, allowing it to efficiently manage significant power loads.
3. Low On-Resistance: It has a low R_DS(on) value, which minimizes conduction losses, enhancing efficiency in power management.
4. Fast Switching Speed: Designed for rapid switching, it reduces transition losses in high-frequency applications.
5. Thermal Performance: It features a robust thermal performance, often with a high maximum junction temperature rating, aiding in effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, which supports better thermal management and easy mounting.
These features make the FERD40H100SG-TR suitable for a variety of applications, including power supplies, motor drives, and DC-DC converters.

Package

The FERD40H100SG-TR is packaged in a TO-220 form factor. This package type is commonly used for power transistors and includes a metal tab for heat dissipation, allowing for effective thermal management in various electronic applications.

Pinout

The FERD40H100SG-TR is a power MOSFET with a total of 4 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching on and off by applying a voltage.
2. Drain (D): This pin connects to the load, where the main current flows from the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply and is where the current exits the MOSFET.
4. Body Diode: While not a separate pin, it's important to note that the structure includes a parasitic body diode that can conduct in the reverse direction.
This MOSFET is designed for high efficiency and performance in power applications, making it suitable for switching and amplifying electronic signals.

Manufacturer

The FERD40H100SG-TR is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, specializing in power and signal management, logic, interface, analog, timing, and optoelectronics. The company serves a wide range of industries, including automotive, industrial, telecommunications, consumer electronics, and healthcare.
Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on providing energy-efficient solutions and has a strong commitment to sustainability. It offers a diverse portfolio of products, including discrete devices, integrated circuits, and application-specific solutions, catering to both high-performance and cost-sensitive applications. The company is known for its innovation in semiconductor technology and aims to address the growing demand for efficient power management and connectivity in an increasingly digital world.

Application

The FERD40H100SG-TR is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) module commonly used in applications such as industrial motor drives, renewable energy systems (like solar inverters), UPS (uninterruptible power supplies), and high-frequency switching power supplies. Its efficient performance makes it suitable for applications requiring robust energy management and high efficiency in power conversion.

Equivalent

The FERD40H100SG-TR is a silicon carbide (SiC) MOSFET. Equivalent products include the C3M0065100K, C3M0065100J, and SCT3060KL. Always verify specifications like voltage, current ratings, and package type to ensure compatibility for your specific application.

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