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FGA40T65SHD

Name: FGA40T65SHD
Rating: 4.7 (12 reviews)

IGBT TRENCH/FS 650V 80A TO3PN

제조업체
Mfr.부분 #FGA40T65SHD
패키지 TO-3PN
데이터시트
재고 있음7180

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package	Bulk,Tube
ProductStatus	Active
IGBTType	Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max)	650 V
Current-Collector(Ic)(Max)	80 A
Current-CollectorPulsed(Icm)	120 A
Vce(on)(Max)@VgeIc	2.1V @ 15V, 40A
Power-Max	268 W
SwitchingEnergy	1.01mJ (on), 297µJ (off)
InputType	Standard
GateCharge	72.2 nC
Td(on/off)@25°C	19.2ns/65.6ns
TestCondition	400V, 40A, 6Ohm, 15V
ReverseRecoveryTime(trr)	31.8 ns
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
Package/Case	TO-3P-3, SC-65-3

개요

Description

The FGA40T65SHD is an N-channel power MOSFET designed for high-efficiency applications. It features a voltage rating of 650V and a continuous current rating of 40A, making it suitable for various power electronic circuits, including switch-mode power supplies, inverters, and motor drivers.
Key specifications include a low on-resistance (Rds(on)) to minimize conduction losses, fast switching capabilities for improved efficiency, and a robust thermal performance. Its capacitance and gate charge characteristics enable efficient operation at high frequencies.
This MOSFET is often packaged in a TO-247 format, providing good heat dissipation, which is crucial for high-power applications. The FGA40T65SHD is favored in industrial and consumer electronics for its reliability and performance under challenging conditions. When designing circuits, ensure proper thermal management to optimize its performance.

Features

The FGA40T65SHD is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage of 650V, making it suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain current up to 40A, ensuring robust performance in demanding conditions.
3. Low On-Resistance (Rds(on)): Offers low on-resistance, typically around 0.4 ohms, which enhances efficiency by reducing power losses.
4. Fast Switching: Designed for rapid switching speeds, making it ideal for use in high-frequency applications like SMPS and inverters.
5. Temperature Stability: Features good thermal performance with a maximum junction temperature of 150°C, allowing for reliable operation in varied environments.
6. TO-220 Package: Housed in a TO-220 package for efficient heat dissipation and ease of mounting in circuit designs.
These attributes make the FGA40T65SHD suitable for applications in power supplies, motor drives, and automotive systems.

Package

The FGA40T65SHD is typically packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power semiconductor devices like IGBTs and MOSFETs.

Pinout

The FGA40T65SHD is an N-channel MOSFET designed for high-voltage applications. It features a total of 5 pins. The pin configuration typically includes:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows when the device is on.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
The main function of the FGA40T65SHD is to act as a switch or amplifier in power electronic circuits, allowing for efficient control of high voltages and currents. It is often used in applications such as power supplies, motor drives, and inverters due to its ability to handle high voltage (up to 650V) and significant current (40A).

Manufacturer

The FGA40T65SHD is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power management, automotive electronics, security, and IoT applications. Infineon is known for its innovation in power semiconductors, including devices like MOSFETs and IGBTs, which are essential in energy-efficient applications. Founded in 1999, Infineon has established itself as a key player in the global semiconductor industry, contributing to advancements in technology and sustainability.

Application

The FGA40T65SHD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as industrial motor drives, renewable energy systems (like solar inverters), uninterruptible power supplies (UPS), and high-efficiency power converters. Its ability to handle high current and voltage makes it ideal for switching and amplification in power electronics systems.

Equivalent

The FGA40T65SHD is a 650V, 40A N-channel MOSFET. Equivalent products include:
1. IPW65R040 (Infineon)
2. STP40NF65 (STMicroelectronics)
3. BSC040N65 (Infineon)
4. LRC040N65 (ON Semiconductor)
Always verify specifications such as voltage, current ratings, RDS(on), and package type before substitution.