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FGA60N65SMD
IGBT FIELD STOP 650V 120A TO3P
- 제조업체
- Mfr.부분 #FGA60N65SMD
- 패키지 TO-3PN
- 데이터시트
- 재고 있음3653
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사양
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 120 A |
| Current-CollectorPulsed(Icm) | 180 A |
| Vce(on)(Max)@VgeIc | 2.5V @ 15V, 60A |
| Power-Max | 600 W |
| SwitchingEnergy | 1.54mJ (on), 450µJ (off) |
| InputType | Standard |
| GateCharge | 189 nC |
| Td(on/off)@25°C | 18ns/104ns |
| TestCondition | 400V, 60A, 3Ohm, 15V |
| ReverseRecoveryTime(trr) | 47 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
개요
Description
The SMD (Surface Mount Device) package allows for compact designs and improved thermal performance, facilitating easier integration into modern electronic circuits. The device is typically used in switching applications due to its fast switching speeds and robust thermal characteristics.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V, along with a low gate charge (Q_g), which contributes to its rapid switching capabilities. Overall, the FGA60N65SMD is an effective choice for engineers seeking reliable and efficient MOSFET solutions in high-power electronic systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of 60A, allowing for significant power handling.
3. Low R_DS(on): It features a low on-state resistance (R_DS(on)), which reduces conduction losses and improves efficiency.
4. Fast Switching: The FGA60N65SMD is designed for fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It has a robust thermal performance with a maximum junction temperature of 175°C, ensuring reliability under high thermal stress.
Overall, the FGA60N65SMD is suitable for use in applications like power supplies, motor drives, and other industrial electronics where efficiency and reliability are paramount.
Package
Pinout
The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching action. A voltage applied to this pin turns the device on or off.
2. Drain (D): The terminal through which the current flows from the drain to the source when the device is on.
3. Source (S): The terminal that connects to the ground or the return path in the circuit.
This MOSFET is commonly used in power supply circuits, motor drives, and other applications requiring efficient switching capabilities.
Manufacturer
Application
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