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FGY120T65SPD-F085
IGBT TRENCH FS 650V 240A TO-247
- 제조업체onsemi
- Mfr.부분 #FGY120T65SPD-F085
- 패키지
- 데이터시트
- 재고 있음6570
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
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사양
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 240 A |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 120A |
Power - Max | 882 W |
Switching Energy | 6.8mJ (on), 3.5mJ (off) |
Input Type | Standard |
Gate Charge | 162 nC |
Td (on/off) @ 25°C | 53ns/102ns |
Test Condition | 400V, 120A, 5Ohm, 15V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Grade | Automotive |
Qualification | AEC-Q101 |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247-3 |
Base Product Number | FGY120 |
Current - Collector Pulsed (Icm) | 378 A |
Reverse Recovery Time (trr) | 123 ns |
개요
Description
The FGY120T65SPD-F085 is a silicon carbide (SiC) MOSFET, designed for high-efficiency power conversion applications. It features a voltage rating of 650V and a current rating of 120A, making it suitable for various industrial applications, including inverters, converters, and power supplies. The device is characterized by its low on-resistance, fast switching speeds, and high thermal conductivity, which contribute to improved energy efficiency and reduced cooling requirements.
The FGY120T65SPD-F085 is particularly advantageous in high-frequency operations and can handle high-temperature environments, making it ideal for electric vehicle (EV) applications and renewable energy systems. Its robust design also enhances reliability and performance in demanding conditions. Overall, this MOSFET represents a significant advancement in power electronics, enabling more compact and efficient designs in modern electrical systems.
The FGY120T65SPD-F085 is particularly advantageous in high-frequency operations and can handle high-temperature environments, making it ideal for electric vehicle (EV) applications and renewable energy systems. Its robust design also enhances reliability and performance in demanding conditions. Overall, this MOSFET represents a significant advancement in power electronics, enabling more compact and efficient designs in modern electrical systems.
Features
The FGY120T65SPD-F085 is a power semiconductor device, specifically a silicon carbide (SiC) MOSFET. Key features include:
1. Voltage Rating: Operates at 650V, suitable for high-voltage applications.
2. Current Rating: Rated for continuous drain current (ID) of up to 120A, enabling significant power handling.
3. Low On-Resistance (RDS(on)): Offers low on-resistance to minimize conduction losses, enhancing overall efficiency.
4. Fast Switching: Capable of high-speed switching, which is ideal for applications like DC-DC converters and inverters.
5. Thermal Performance: Designed for improved thermal management, allowing for better performance under high temperatures.
6. High Reliability: Features inherent robustness typical of SiC technology, ensuring longevity and dependability in harsh environments.
7. Package Type: Available in a compact package for ease of integration into various systems.
These features make the FGY120T65SPD-F085 suitable for applications in renewable energy systems, electric vehicles, and industrial power supplies.
1. Voltage Rating: Operates at 650V, suitable for high-voltage applications.
2. Current Rating: Rated for continuous drain current (ID) of up to 120A, enabling significant power handling.
3. Low On-Resistance (RDS(on)): Offers low on-resistance to minimize conduction losses, enhancing overall efficiency.
4. Fast Switching: Capable of high-speed switching, which is ideal for applications like DC-DC converters and inverters.
5. Thermal Performance: Designed for improved thermal management, allowing for better performance under high temperatures.
6. High Reliability: Features inherent robustness typical of SiC technology, ensuring longevity and dependability in harsh environments.
7. Package Type: Available in a compact package for ease of integration into various systems.
These features make the FGY120T65SPD-F085 suitable for applications in renewable energy systems, electric vehicles, and industrial power supplies.
Package
The FGY120T65SPD-F085 is typically packaged in a TO-247 format, which is a type of discrete semiconductor package suitable for high-power applications. This package features good thermal performance and is designed for easy heatsinking, making it ideal for power electronics.
Pinout
The FGY120T65SPD-F085 is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. It typically features a TO-247 package with a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin connects to the load and is where the main current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, completing the current path when the MOSFET is activated.
The FGY120T65SPD-F085 is ideal for applications requiring high voltage and current capability, such as in power supplies and motor drives.
1. Gate (G): This pin is used to control the MOSFET's switching operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin connects to the load and is where the main current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, completing the current path when the MOSFET is activated.
The FGY120T65SPD-F085 is ideal for applications requiring high voltage and current capability, such as in power supplies and motor drives.
Manufacturer
The FGY120T65SPD-F085 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, playing a crucial role in enabling energy efficiency and sustainability in electronic devices. Infineon focuses on areas such as automotive safety, energy management, and the Internet of Things (IoT), making it a key player in the electronics industry.
Application
The FGY120T65SPD-F085 is a high-voltage IGBT module typically used in applications such as industrial motor drives, renewable energy systems (like solar inverters), traction for electric vehicles, and power converters. Its high efficiency and fast switching capabilities make it suitable for applications requiring reliable power management and conversion.
Equivalent
The FGY120T65SPD-F085 is a silicon carbide (SiC) MOSFET. Equivalent products include the Cree/Wolfspeed C3M0120090D, ON Semiconductor MCD20-60-12, and Infineon EiceDRIVER EiceDRIVER 1EDI60N12AF. Always verify specifications such as voltage, current ratings, and switching characteristics for compatibility.
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