이미지는 참조용만

FP35R12KT4

Name: FP35R12KT4
Rating: 4.7 (12 reviews)

제조업체
Mfr.부분 #FP35R12KT4
패키지
데이터시트 FP35R12KT4 DataSheet
재고 있음4691

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Mounting Style	Screw Mount
Package / Case	Econo 2
Technology	Si
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Packaging	Tray
Brand	Infineon Technologies
Product Type	IGBT Modules
Subcategory	IGBTs
Configuration	Hex
Series	Trenchstop IGBT4 - T4
Height	17 mm
Length	107.5 mm
Product	IGBT Modules
Factory Pack Quantity:Factory Pack Quantity	10
Width	45 mm
Part # Aliases	SP000372918 FP35R12KT4BOSA1
Unit Weight	1.375685 oz
Shipping Restrictions	Mouser does not presently sell this product in your region.
Collector- Emitter Voltage VCEO Max	1.2 kV
Continuous Collector Current at 25 C	35 A
Maximum Gate Emitter Voltage	20 V
Tradename	TRENCHSTOP EconoPIM

개요

Description

The FP35R12KT4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fujitsu. It is designed for various applications, including renewable energy systems, motor drives, and industrial equipment. The module features a maximum voltage rating of 1200V and a maximum current rating of 35A, making it suitable for medium-power applications.
Key attributes include low switching losses, high efficiency, and fast switching capabilities, which enhance overall system performance. The FP35R12KT4 is typically housed in a compact package for easy integration into existing systems while providing robust thermal management features to ensure reliability under demanding conditions.
Overall, the FP35R12KT4 is optimized for energy efficiency and performance, making it a viable choice for engineers seeking reliable power semiconductor solutions.

Features

The FP35R12KT4 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-performance applications. Key features include:
1. Voltage Rating: 1200V – suitable for medium voltage applications.
2. Current Rating: 35A – allows for significant power handling capabilities.
3. Low Switching Losses: Enhanced efficiency in switching applications, leading to reduced power dissipation.
4. Thermal Performance: Designed for effective heat dissipation, ensuring reliable operation under high temperatures.
5. Integrated Diode: Features a freewheeling diode, allowing for faster switching and improved overall performance in inverter circuits.
6. Robust Package: Offered in a compact and durable package, facilitating easy integration into various systems.
7. Applications: Commonly used in motor drives, renewable energy systems, and industrial automation.
This module is ideal for applications requiring efficient power conversion and control.

Package

The FP35R12KT4 is typically packaged in a TO-247 format, which is a high-power semiconductor package. This package type is known for its robust thermal performance and ease of mounting, making it suitable for various power electronics applications.

Pinout

The FP35R12KT4 is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) designed for various applications in power electronics. It features a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the switching of the IGBT. Applying a voltage to this pin allows the device to turn on (conduct) or off (non-conduct).
2. Collector (C): This pin is the power terminal where the high-voltage supply is connected. It is the terminal through which the current flows when the device is on.
3. Emitter (E): This pin is connected to the ground or the return path of the circuit. It completes the circuit by allowing current to flow back after passing through the collector.
4. N/C (Not Connected): This pin may not be used in the circuit and is typically left unconnected.
The FP35R12KT4 is utilized in applications such as motor drives, inverters, and power converters due to its high efficiency and robust performance.

Manufacturer

The FP35R12KT4 is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing a wide range of semiconductor and system solutions, focusing on areas such as power management, automotive, industrial, and security applications. The company is known for its innovative technologies, including power semiconductors, microcontrollers, and sensors. Infineon serves various industries, including automotive, industrial automation, and consumer electronics, and is committed to advancing energy efficiency and sustainable technologies.

Application

The FP35R12KT4 is a high-performance power MOSFET commonly used in applications such as power management, DC-DC converters, inverters, and motor drives. It is ideal for energy-efficient designs in renewable energy systems, electric vehicles, and industrial automation. Its low on-resistance and fast switching capabilities make it suitable for applications requiring high efficiency and thermal performance.

Equivalent

The FP35R12KT4 is a IGBT module produced by Infineon. Equivalent products include the Mitsubishi CM35D12, Semikron SKM35GB123, and the ON Semiconductor MFG35R12. Always verify specifications and suitability for your application before substituting components.