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FQA11N90

Name: FQA11N90
Rating: 4.7 (12 reviews)

MOSFET N-CH 900V 11.4A TO3P

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Mfr.부분 #FQA11N90
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데이터시트 FQA11N90 DataSheet
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사양

Supplier	Rochester Electronics, LLC
Package	Tube
Series	QFET®
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	900 V
Current-ContinuousDrain(Id)@25°C	11.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	960mOhm @ 5.7A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	94 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	3500 pF @ 25 V
PowerDissipation(Max)	300W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-3P

개요

Description

FQA11N90 is a high-voltage N-channel MOSFET used for switching power electronics.
Key points:
- Type: N-channel enhancement-mode MOSFET
- Voltage/current: Vds ≈ 900 V; Id ≈ 11 A (continuous)
- Package: Commonly TO-220 (through-hole) with variants in other power packages
- Gate drive: Requires about 10–12 V for full conduction; Vgs(th) typically 2–4 V
- Applications: Offline switch-mode power supplies (flyback, boost, half-bridge), PFC stages, motor drives, other high-voltage switching needs
- Design notes: Significant power dissipation → requires adequate heatsinking and good PCB layout; consider safe operating area and protection (dv/dt, avalanche, short-circuit)
If you need exact values (Rds(on), max Pd, package variant), check the latest datasheet from Onsemi/Fairchild, as numbers can vary by lot and packaging.

Features

FQA11N90 is a high-voltage N-channel power MOSFET. Key features:
- VDS: 900 V; ID: about 11 A (continuous)
- RDS(on): roughly 2.7 Ω max at VGS = 10 V (typical near this range)
- Fast-switching N-channel device for high-voltage SMPS
- Gate threshold typically 2–4 V
- Avalanche-energy rugged for transient protection and reliability
- Single enhancement-mode N-channel MOSFET
- Package: TO-220AB (through-hole) version available
- Operating temperature: -55 to +150°C
- Applications: offline power supplies, PFC, inverters, motor drives, high-voltage switching
Note: exact numbers vary by lot and package; consult the datasheet for precise parameters and test conditions.

Package

The FQA11N90 is supplied in a TO‑247 (3‑lead) plastic power package (TO‑247-3).

Pinout

FQA11N90 is a 3-pin power device (plus a metal mounting/tab) in a TO-247-style package. Pinout (looking at the front with pins down): pin 1 = Gate, pin 2 = Drain (also the metal tab), pin 3 = Source. Function: an N‑channel, high‑voltage power MOSFET (≈900 V rating, ~11 A class) used for high‑voltage switching, power conversion and industrial power applications.

Manufacturer

The FQA11N90 was manufactured by Fairchild Semiconductor (the part family is often listed under Fairchild; Fairchild was later acquired by ON Semiconductor). Fairchild/ON Semiconductor is a U.S.-based global semiconductor company that designs and manufactures power discrete devices, power-management ICs, analog and mixed-signal components used in automotive, industrial, computing and consumer applications.

Application

- Offline switch-mode power supplies and adapters
- High-voltage DC-DC converters (telecom/industrial)
- PFC and boost stages
- Inverters and motor drives (high-voltage, medium power)
- UPS front-ends and main inverter stages
- Solar/energy-storage inverters and chargers
- Resonant/soft-switching high-voltage topologies

Equivalent

Equivalent products (900 V, ~11 A N-channel MOSFETs) include:
- IRF11N90 (International Rectifier)
- STP11N90 (STMicroelectronics)
- IXFN11N90 (IXYS)
- FQB11N90 (Fairchild/ON Semiconductor)
Always verify Rds(on), Vds, Id, package, and thermal specs in the datasheet and use manufacturer cross-reference tools for exact matches.