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FQA9N90C
MOSFET N-CH 900V 9A TO3P
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- Mfr.부분 #FQA9N90C
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사양
| Series | QFET® |
| Part Status | Obsolete |
| Base Product Number | FQA9 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2730 pF @ 25 V |
| Power Dissipation (Max) | 280W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package | TO-3P-3, SC-65-3 |
| Packaging | Tube |
개요
Description
Key specifications include a maximum drain-source voltage (Vds) and a high continuous drain current (Id), allowing it to handle significant power loads efficiently. Its thermal performance is optimized for reliable operation in demanding conditions. FQA9N90C is often utilized in applications requiring efficient power conversion and management, contributing to energy savings and improved system performance.
When designing circuits with FQA9N90C, proper thermal management and circuit protection techniques should be considered to maximize performance and reliability.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 9A, providing flexibility in various designs.
3. Low On-Resistance: Exhibits a low on-resistance (R_DS(on)) typically around 0.5Ω, which minimizes power loss during operation.
4. Fast Switching Speed: Designed for efficient switching, enhancing performance in PWM applications.
5. Thermal Resistance: Features low thermal resistance, allowing for better heat dissipation and improved reliability.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V and 4V, enabling easy drive requirements.
7. Package: Available in TO-220 and other packages for versatile design integration.
These features make the FQA9N90C ideal for use in power supplies, motor drivers, and other high-voltage applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load. The current flows out from this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or a lower potential in a typical circuit. The current enters the MOSFET through this pin when it is turned on.
The FQA9N90C is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 900V and a continuous drain current rating (I_D) of 9A. This makes it suitable for various applications, including power supplies and motor drives.
Manufacturer
Application
Equivalent
1. IRF840
2. STP9NK90Z
3. MRF490
4. FQP9N90
5. BUK9YB90-55
Always check datasheets for specific characteristics and compatibility in your application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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