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FQD7N10LTM
MOSFET N-CH 100V 5.8A DPAK
- 제조업체
- Mfr.부분 #FQD7N10LTM
- 패키지 TO-252-3,DPAK(2Leads+Tab),SC-63
- 데이터시트 FQD7N10LTM DataSheet
- 재고 있음2867
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 5.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 350mOhm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 290 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 25W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
개요
Description
Key specifications typically include a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 7A, and a gate threshold voltage (Vgs) that allows for efficient switching. The device is housed in a compact package, optimizing space in electronic designs. Its fast switching capabilities contribute to its effectiveness in high-frequency applications, enhancing overall system efficiency.
The FQD7N10LTM's combination of performance, reliability, and thermal characteristics makes it a popular choice among engineers for various electronic and power circuit designs. Always consult the specific datasheet for detailed electrical characteristics and safe operating conditions.
Features
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 100V, suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain currents up to 7A, making it suitable for moderate power applications.
3. Low R_DS(on): Offers a low on-resistance, reducing conduction losses and improving efficiency in power conversion circuits.
4. Fast Switching Speed: Ideal for applications requiring rapid switching, such as in power supplies and converters.
5. Thermal Performance: Designed with a TO-220 package for effective heat dissipation, allowing for reliable operation under higher temperatures.
6. Gate Threshold Voltage (V_GS(th)): Typically around 2-4V, enabling it to be driven by standard logic levels.
These features make the FQD7N10LTM suitable for applications like DC-DC converters, motor drivers, and circuit protection.
Package
Pinout
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET when it is turned on. It is typically connected to ground in low-side switching applications.
The FQD7N10LTM is commonly used in power applications due to its low on-resistance and high current handling capabilities.
Manufacturer
Application
Equivalent
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DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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