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FQP9P25
MOSFET P-CH 250V 9.4A TO220-3
- 제조업체
- Mfr.부분 #FQP9P25
- 패키지
- 데이터시트 FQP9P25 DataSheet
- 재고 있음7113
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사양
| Package | Tube |
| Series | QFET® |
| ProductStatus | Last Time Buy |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 9.4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 620mOhm @ 4.7A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1180 pF @ 25 V |
| PowerDissipation(Max) | 120W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
개요
Description
Key features include a low on-resistance (RDS(on)), which reduces power loss and enhances efficiency, a high breakdown voltage, and fast switching capabilities. Its thermal performance allows for effective heat dissipation, making it reliable in demanding environments.
Applications for FQP9P25 encompass consumer electronics, industrial automation, and automotive systems. When selecting this MOSFET for a project, it's essential to consider parameters such as maximum drain-source voltage (VDS), continuous drain current (ID), and the thermal characteristics to ensure optimal performance in the intended application. Always consult the datasheet for detailed specifications and recommended operating conditions.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of -25V, making it suitable for low to medium voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is -9.2A, allowing it to handle significant loads.
3. R_DS(on): It has a low on-resistance of around 0.15 ohms at V_GS of -10V, which reduces power loss and heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from -1V to -3V, enabling it to be driven efficiently in various circuit configurations.
5. Package Type: Available in TO-220, TO-247, and other packages, offering flexibility in heat dissipation and mounting options.
6. Fast Switching: Suitable for high-speed applications, contributing to efficient circuit performance.
Overall, the FQP9P25 is ideal for power management, audio amplifiers, and motor control circuits.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state by applying a voltage relative to the source.
2. Source (S): The terminal through which the current enters the device when it is on.
3. Drain (D): The terminal through which the current exits the device when it is conducting.
4. Body (B): The substrate or body terminal, often internally connected to the source in MOSFETs.
The FQP9P25 is commonly used in power management applications, including switching and amplification. Its P-channel configuration makes it suitable for high-side switching applications. Its key specifications include a maximum V_DS of -25V, I_D of -9.2A, and a low on-resistance (R_DS(on)), making it efficient for handling power. Always refer to the manufacturer's datasheet for detailed electrical characteristics and applications.
Manufacturer
Application
Equivalent
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