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FQPF4N90C
MOSFET N-CH 900V 4A TO220F
- 제조업체
- Mfr.부분 #FQPF4N90C
- 패키지 TO-220F-3
- 데이터시트 FQPF4N90C DataSheet
- 재고 있음5327
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사양
| Package | Bulk,Tube |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.2Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 960 pF @ 25 V |
| PowerDissipation(Max) | 47W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
개요
Description
The device is constructed to handle high-speed switching, making it ideal for use in converters and inverters. It typically has a gate threshold voltage ranging from 2V to 4V, allowing for compatibility with various control circuits. Additionally, it offers thermal stability with a high junction temperature rating.
The FQPF4N90C is packaged in a TO-220 format, facilitating heat dissipation and ease of integration into thermal management systems. Overall, this MOSFET is valued for its reliability and performance in high-voltage applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 900V, suitable for high-voltage circuits.
2. Current Rating: The continuous drain current (I_D) is up to 4A, allowing for substantial load handling.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) typically around 0.9 ohms, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V to 4V, enabling easy interfacing with various control circuits.
5. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for fast switching applications, making it suitable for power supplies and inverter circuits.
Overall, the FQPF4N90C is ideal for applications requiring high voltage and efficiency, such as in power supplies, motor drives, and switching regulators.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the 'on' state. It is connected to the load in a circuit.
3. Source (S): This pin is the output terminal where the current exits the MOSFET. It is typically connected to ground or a lower voltage level in a circuit.
The FQPF4N90C is designed for high-voltage applications, with a maximum V_DS of 900V and a continuous current rating of up to 4A, making it suitable for various switching and amplification applications.
Manufacturer
Application
Equivalent
1. IRF940
2. STP4N90Z
3. MTP4N90E
4. FQP4N90
5. PSMN4R0-30
Always verify specifications like voltage, current, and RDS(on) to ensure compatibility for your specific application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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