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FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
- 제조업체
- Mfr.부분 #FQT1N60CTF-WS
- 패키지
- 데이터시트 FQT1N60CTF-WS DataSheet
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사양
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
| Power Dissipation (Max) | 2.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | FQT1N60 |
개요
Description
This MOSFET is characterized by its fast switching speed, which enhances performance in high-frequency applications. It typically comes in a TO-220 package, facilitating effective thermal management due to its ability to dissipate heat.
Key specifications include a continuous drain current (I_D) of 1A, a gate threshold voltage (V_GS(th)) range, and a maximum gate-source voltage (V_GS) to ensure safe operation. The FQT1N60CTF-WS is often used in conjunction with other components in power circuits, providing reliability and high efficiency.
This device is ideal for engineers and designers looking to implement robust solutions in their electronic systems while maintaining energy efficiency.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage environments.
2. Current Rating: The continuous drain current (ID) is rated at 1A, which supports a range of applications.
3. RDS(on): It has a low on-resistance, typically around 1.7 ohms, minimizing power loss and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is between 2V to 4V, allowing for compatible drive voltages.
5. Package: It is available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for quick turn-on and turn-off times, enabling efficient operation in switching applications.
7. Applications: Commonly used in power management, motor control, and high-voltage switching applications.
Overall, the FQT1N60CTF-WS is a robust choice for various electronic applications requiring high voltage and efficient performance.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching on and off. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is turned on. It is connected to the load.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It provides a return path for the load current.
The FQT1N60CTF-WS is designed for high-voltage applications, with a maximum V_DS of 600V and can handle a continuous drain current of up to 1A. It is commonly used in power management applications, such as switch-mode power supplies and motor control circuits.
Manufacturer
Application
Equivalent
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