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FQT7N10LTF
POWER FIELD-EFFECT TRANSISTOR, 1
- 제조업체
- Mfr.부분 #FQT7N10LTF
- 패키지 SOT-223-4
- 데이터시트 FQT7N10LTF DataSheet
- 재고 있음7133
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사양
| Package | Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 1.7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 350mOhm @ 850mA, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 290 pF @ 25 V |
| PowerDissipation(Max) | 2W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-4 |
개요
Description
The "LTF" in its designation often indicates a specific package type or manufacturer designation, which may relate to thermal performance or physical dimensions. MOSFETs like the FQT7N10LTF are commonly used in power supplies, motor drivers, and other circuits requiring efficient control of high currents and voltages.
When selecting this component, consider parameters like gate threshold voltage, thermal resistance, and safe operating area to ensure compatibility with your application. Overall, the FQT7N10LTF is a versatile and efficient choice for modern electronic designs.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 7A.
3. R_DS(on): The on-resistance is low, typically around 0.25 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) typically between 2V and 4V, facilitating easy drive compatibility.
5. Package: Available in a TO-220 package, allowing for efficient heat dissipation.
6. Switching Performance: It offers fast switching speeds, making it ideal for applications like power supplies, motor control, and other switching applications.
7. Thermal Resistance: The device features a low thermal resistance, enhancing reliability in demanding scenarios.
These features make the FQT7N10LTF suitable for a wide range of electronic applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off by applying a voltage.
2. Drain (D): The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the terminal through which the current exits the MOSFET when it is in the on state.
The FQT7N10LTF is designed for low on-resistance and high-speed switching in power applications, making it suitable for use in a variety of electronic circuits.
Manufacturer
Application
Equivalent
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