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FZ3600R17HE4P
IGBTs PP IHM I
- 제조업체
- Mfr.부분 #FZ3600R17HE4P
- 패키지
- 데이터시트 FZ3600R17HE4P DataSheet
- 재고 있음29475
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사양
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개요
Description
The FZ3600R17HE4P is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. Designed for industrial applications, it features a rated current of 3600 A and a voltage rating of 1700 V, making it suitable for high-voltage and high-current applications, such as inverters, drives, and renewable energy systems.
This module utilizes a state-of-the-art trench technology that enhances efficiency and reduces switching losses, allowing for improved thermal performance and reliability. The FZ3600R17HE4P is packaged in a robust housing, facilitating easy integration into power electronic systems.
Its key features include low conduction and switching losses, high thermal stability, and a built-in diode for fast recovery. The module is ideal for applications in traction, industrial motor drives, and power conversion systems where high efficiency and performance are crucial. Overall, the FZ3600R17HE4P stands out for its combination of power handling capabilities and reliability in demanding environments.
This module utilizes a state-of-the-art trench technology that enhances efficiency and reduces switching losses, allowing for improved thermal performance and reliability. The FZ3600R17HE4P is packaged in a robust housing, facilitating easy integration into power electronic systems.
Its key features include low conduction and switching losses, high thermal stability, and a built-in diode for fast recovery. The module is ideal for applications in traction, industrial motor drives, and power conversion systems where high efficiency and performance are crucial. Overall, the FZ3600R17HE4P stands out for its combination of power handling capabilities and reliability in demanding environments.
Features
The FZ3600R17HE4P is an IGBT (Insulated Gate Bipolar Transistor) module primarily used in industrial applications like inverters and motor drives. Key features include:
1. High Efficiency: It offers low switching and conduction losses, improving overall system efficiency.
2. High Voltage Rating: Rated for 1700V, making it suitable for high-voltage applications.
3. Current Rating: Capable of handling a continuous collector current of up to 3600A, allowing it to manage substantial power loads.
4. Thermal Performance: Designed for effective heat dissipation, often featuring a robust thermal interface for improved thermal management.
5. Package Type: Comes in a compact module design, facilitating easier integration into various systems.
6. Ruggedness: Built to withstand harsh operational environments, ensuring durability and reliability.
These features make the FZ3600R17HE4P a preferred choice for power conversion and control in renewable energy systems, industrial machinery, and rail traction applications.
1. High Efficiency: It offers low switching and conduction losses, improving overall system efficiency.
2. High Voltage Rating: Rated for 1700V, making it suitable for high-voltage applications.
3. Current Rating: Capable of handling a continuous collector current of up to 3600A, allowing it to manage substantial power loads.
4. Thermal Performance: Designed for effective heat dissipation, often featuring a robust thermal interface for improved thermal management.
5. Package Type: Comes in a compact module design, facilitating easier integration into various systems.
6. Ruggedness: Built to withstand harsh operational environments, ensuring durability and reliability.
These features make the FZ3600R17HE4P a preferred choice for power conversion and control in renewable energy systems, industrial machinery, and rail traction applications.
Package
The FZ3600R17HE4P is a power transistor packaged in a 4-pin H-Bridge configuration, typically designed for high-performance applications. Its package type is often a module or a specific form factor suited for efficient thermal management and electrical performance in power electronics.
Pinout
The FZ3600R17HE4P is a power semiconductor device, specifically a IGBT (Insulated Gate Bipolar Transistor) module, produced by Infineon Technologies. It features a pin count of 6. The main functions of these pins are:
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): Main terminal for the output current flow.
3. Emitter (E): Returns current to the source ground.
4. Thermal sensing (T): Monitors temperature for thermal protection.
5. Negative terminal (N): Acts as a reference point for the gate drive circuit.
6. Positive terminal (P): Connects to the positive supply voltage.
This module is commonly used in applications such as motor drives, renewable energy systems, and industrial power supplies due to its high efficiency and performance.
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): Main terminal for the output current flow.
3. Emitter (E): Returns current to the source ground.
4. Thermal sensing (T): Monitors temperature for thermal protection.
5. Negative terminal (N): Acts as a reference point for the gate drive circuit.
6. Positive terminal (P): Connects to the positive supply voltage.
This module is commonly used in applications such as motor drives, renewable energy systems, and industrial power supplies due to its high efficiency and performance.
Manufacturer
The FZ3600R17HE4P is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial power control, and security technologies. The company is known for its innovation in power management, microcontrollers, and sensor technologies, serving a wide range of industries such as automotive, industrial, and consumer electronics. Infineon is recognized for its commitment to sustainability and energy efficiency, contributing to advancements in electric mobility and renewable energy solutions.
Application
The FZ3600R17HE4P is a high-performance IGBT (Insulated Gate Bipolar Transistor) used primarily in industrial applications such as drives, inverters, and power supplies. It is suitable for medium-voltage applications, including renewable energy systems (like solar inverters), motor control, and traction systems in railways. Its efficiency and thermal performance make it ideal for demanding environments in power electronics.
Equivalent
The FZ3600R17HE4P is an IGBT module from Infineon. Equivalent products include the:
1. FZ3600R17HE4 - Similar specifications.
2. FZ600R17HE4 - Higher current rating.
3. FZ1000R17HE4 - Higher power rating.
4. FZ300R17HE4P - Lower current rating.
Compatibility can vary based on application; always verify specifications before substituting.
1. FZ3600R17HE4 - Similar specifications.
2. FZ600R17HE4 - Higher current rating.
3. FZ1000R17HE4 - Higher power rating.
4. FZ300R17HE4P - Lower current rating.
Compatibility can vary based on application; always verify specifications before substituting.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
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