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H26M62002JPR
32GB eMMC 5.1 FBGA-96 Memory (ICs) RoHS
- 제조업체
- Mfr.부분 #H26M62002JPR
- 패키지
- 데이터시트 H26M62002JPR DataSheet
- 재고 있음24604
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Packaging | FBGA-96 |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V |
| Controller Stand-By Current | 120uA |
| Interface | eMMC 5.1 |
| Memory Size | 32GB |
| NAND Operating Voltage (VCCF) | 2.7V~3.6V |
| NAND Stand-By Current | 60uA |
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 280MB/S |
| Writing Speed in Sequence | 90MB/S |
개요
Description
The designation "H26M" refers to the general family of the memory chip, while "62002" indicates specific characteristics such as its architecture and manufacturing process. The "JPR" suffix often denotes packaging and speed grade.
H26M62002JPR is designed to provide high-speed data processing and efficient performance, aligning with the demands of modern computing applications. It utilizes advanced fabrication technologies to enhance reliability and power efficiency, making it suitable for high-performance and embedded systems.
Overall, this DRAM chip plays a crucial role in enabling devices to run smoothly by facilitating quick data access and storage.
Features
1. Memory Structure: It utilizes a NAND architecture, providing efficient storage density and performance.
2. Access Time: Offers fast read access times, typically around 25 ns, enabling quick data retrieval.
3. Data Management: Supports advanced error correction features, enhancing data reliability.
4. Endurance: Designed for high endurance, allowing a substantial number of program/erase cycles, typically up to 100,000.
5. Power Consumption: Low power operation modes help in energy conservation, making it suitable for battery-powered devices.
6. Interface: Compatible with standard NAND Flash interfaces, facilitating easy integration into various systems.
7. Temperature Range: Operates effectively across a wide temperature range, making it suitable for industrial applications.
These features make the H26M62002JPR suitable for applications in consumer electronics, automotive, and industrial sectors where reliable memory is essential.
Package
Pinout
The primary functions of the H26M62002JPR include:
- Data Storage: It is designed for high-density storage applications, suitable for consumer electronics, mobile devices, and industrial applications.
- Data Transfer: Supports reliable data transfer rates, with an interface compatible with various systems.
- Erase and Write Operations: Capable of performing multiple erase and write cycles, essential for efficient data management.
This NAND Flash is typically used in applications requiring reliable, high-capacity memory solutions.
Manufacturer
Application
Equivalent
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
지불 기간은 100% 사전 지불입니다.
현재, 우리는 아래 지불 방법만 받아들입니다.:
1. PayPal
2. 신용/직불 카드
3. 전선 전송
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