H5TC4G63EFR-RDA

The H5TC4G63EFR-RDA is a DRAM (Dynamic Random Access Memory) chip produced by Samsung, specifically designed for high-performance applications. It is a 4Gb (gigabit) DDR3 (Double Data Rate 3) SDRAM, organized as 512MB x 8 bits. This memory chip operates at a frequency of 1600 MHz and supports various features such as low power consumption and high-speed data transfer, making it suitable for mobile devices, laptops, and other computing applications.
Key specifications include a supply voltage of 1.5V, 8-byte data width, and a package type that facilitates integration into various electronic systems. The H5TC4G63EFR-RDA is characterized by its reliability and efficiency, meeting the demands of modern electronic devices that require fast and efficient memory solutions. Its design also adheres to industry standards, ensuring compatibility and performance in different applications.
Overall, the H5TC4G63EFR-RDA represents a crucial component in the evolving landscape of memory technology, enabling enhanced performance for next-generation devices.

The H5TC4G63EFR-RDA is a 4GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip manufactured by Hynix (now SK Hynix). Key features include:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB (Gigabytes)
- Data Rate: 1600 MT/s (megatransfers per second)
- Bus Width: 64 bits
- Organization: 512 Meg x 8 bits
- Voltage: Operates at 1.5V
- Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package.
- Temperature Range: Commercial grade, generally between 0°C to 85°C.
- Latency: CL=11 or similar, depending on configuration.
This memory chip is designed for use in various applications such as laptops, desktops, and servers, providing efficient performance for multitasking and gaming. Its low power consumption and high data transfer rates make it suitable for modern computing needs.

The H5TC4G63EFR-RDA is typically packaged in a 78-ball FBGA (Fine-pitch Ball Grid Array) package type. This compact packaging is designed for high-density memory applications, providing efficient thermal management and space utilization.

The H5TC4G63EFR-RDA is a 4 Gb (gigabit) DDR3 SDRAM memory chip manufactured by Samsung. It comes in a 78-ball Thin Ball Grid Array (TBGA) package. The pin count is 78, and the primary functions of the pins include power supply, ground, data input/output, control signals, and clock signals. Specifically, it supports standard DDR3 operations, including address and command inputs, data lines, and various control signals for proper memory operation.

The H5TC4G63EFR-RDA is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is one of the largest technology companies globally, known for its wide range of products, including semiconductors, consumer electronics, telecommunications equipment, and more. The H5TC4G63EFR-RDA is a mobile DRAM (Dynamic Random Access Memory) chip, commonly used in smartphones and other portable devices, highlighting Samsung's significant role in the semiconductor industry. The company is recognized for its innovation and leadership in technology, with a strong focus on research and development.

The H5TC4G63EFR-RDA is a 4Gb DDR3 SDRAM memory chip commonly used in various applications, including laptops, desktop computers, servers, and networking equipment. It is suitable for high-performance computing, gaming systems, and embedded devices due to its fast data transfer rates and energy efficiency. Additionally, it is utilized in consumer electronics like tablets and smartphones for enhanced multitasking and performance.

The H5TC4G63EFR-RDA is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TC4G63EFR-PBA
2. Micron MT41K256M16HA-125
3. Samsung K4B4G1646F-BCK0
Ensure compatibility with the specific application and configuration before substitution.