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HGTG20N60B3D

Name: HGTG20N60B3D
Rating: 4.7 (12 reviews)

IGBT 600V 40A TO-247-3

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Mfr.부분 #HGTG20N60B3D
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사양

Part Status	Obsolete
Base Product Number	HGTG20N60
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Power - Max	165 W
Switching Energy	475µJ (on), 1.05mJ (off)
Input Type	Standard
Gate Charge	80 nC
Reverse Recovery Time (trr)	55 ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package	TO-247-3
Supplier Device Package	TO-247-3
Packaging	Tube

개요

Description

The HGTG20N60B3D is a high-voltage N-channel MOSFET designed for power applications, particularly in switch-mode power supplies and motor drives. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 20A, making it suitable for medium to high power applications.
This device offers low on-resistance (R_DS(on)), which minimizes conduction losses, and it has a fast switching speed, enabling efficient operation at high frequencies. The HGTG20N60B3D is typically characterized by a robust thermal performance, allowing it to handle significant power dissipation without overheating.
The MOSFET is housed in a TO-220 package, facilitating effective heat dissipation. It is commonly used in applications such as DC-DC converters, inverters, and other circuits requiring efficient switching. Its reliability and performance make it a popular choice among engineers in power electronic designs.

Features

The HGTG20N60B3D is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (Vds).
2. Current Rating: Capable of handling continuous drain current up to 20A at appropriate cooling conditions.
3. Rds(on): Low on-resistance (typically around 0.22 ohms), which helps reduce power losses during operation.
4. Gate Threshold Voltage: Suitable for operation with a gate-source voltage (Vgs) of 10V, ensuring efficient switching.
5. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in power conversion.
6. Package Type: Available in a TO-247 package, facilitating better thermal management.
7. Thermal Performance: Excellent thermal stability, making it suitable for demanding applications like inverters, switch-mode power supplies, and motor control.
Overall, the HGTG20N60B3D is ideal for applications requiring high voltage, current handling, and efficiency.

Package

The HGTG20N60B3D is packaged in a TO-247 type package. This package is designed for high-power applications, providing good thermal performance and ease of heat sinking.

Pinout

The HGTG20N60B3D is an N-channel MOSFET designed for high-voltage applications. It features a TO-247 package with a total of three pins.
The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This is the pin where the high voltage and current are supplied to the load.
3. Source (S) - This pin is connected to the ground or negative side of the circuit.
The HGTG20N60B3D is rated for a maximum voltage of 600V and a continuous current of 20A, making it suitable for various high-power applications like motor drives and switch-mode power supplies.

Manufacturer

The HGTG20N60B3D is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its focus on power management, automotive electronics, and security solutions, playing a key role in driving innovations in the semiconductor industry. Infineon Technologies caters to a wide range of markets and applications, emphasizing energy efficiency and sustainable technologies.

Application

The HGTG20N60B3D is a high-voltage N-channel MOSFET primarily used in applications such as switch-mode power supplies, motor drives, and industrial power controllers. Its capabilities make it suitable for high-efficiency converters, inverters, and various power management systems requiring robust performance in high-voltage environments.

Equivalent

The HGTG20N60B3D is a high-voltage IGBT. Equivalent products include the HGTG20N60B3, HGTG20N60B2, and other similar IGBT models from manufacturers like Infineon, ON Semiconductor, and Mitsubishi. Always check the datasheets for specific parameters such as voltage, current, and switching speeds to ensure compatibility.