HMC8410LP2FETR

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HMC8410LP2FETR

IC AMP RADAR 10MHZ-10GHZ 6LFCSP

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배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
Frequency 10MHz ~ 10GHz
P1dB 21dBm
Gain 19.5dB
NoiseFigure 1.1dB
RFType Radar
Voltage-Supply 5V
Current-Supply 65mA
MountingType Surface Mount
Package/Case 6-VDFN Exposed Pad, CSP

개요

Description

The HMC8410LP2FETR is a low-noise amplifier (LNA) designed for high-performance radio frequency (RF) applications. It operates within the frequency range of 0.01 GHz to 10 GHz, making it suitable for a wide range of wireless communication systems, including cellular infrastructure, radar, and satellite systems. The device offers a gain of approximately 15 dB and features a noise figure of 1.2 dB, which enhances signal clarity by minimizing interference.
This amplifier comes in a compact 2 mm x 2 mm LFCSP (Lead Frame Chip Scale Package), making it ideal for space-constrained applications. The HMC8410LP2FETR is designed to operate with a supply voltage of 5V, providing a balance between performance and power efficiency. It also includes a power-down mode to conserve energy when not in use. The device is known for its robust performance and reliability in harsh environments.
Overall, the HMC8410LP2FETR significantly improves signal-to-noise ratio in RF systems, making it a valuable component for enhancing receiver sensitivity and overall system performance.

Features

The HMC8410LP2FETR is a GaAs MMIC low noise amplifier designed for high performance across the frequency range of 0.01 to 10 GHz. Key features include:
1. Low Noise Figure: It offers an exceptionally low noise figure of 1.3 dB, making it suitable for sensitive applications.
2. High Gain: Provides a high gain of 15 dB, ensuring effective signal amplification.
3. Wide Bandwidth: Covers a broad frequency range from 0.01 to 10 GHz, which is ideal for diverse applications.
4. Output Power: Delivers a high output power at 1 dB compression point (P1dB) of 20 dBm.
5. IP3: Offers an input third-order intercept point (IIP3) of 35 dBm, indicating excellent linearity.
6. Power Supply: Operates on a single supply voltage of +5V, simplifying power management.
7. Compact Package: Comes in a 2x2 mm leadless QFN package, making it suitable for space-constrained designs.
8. Robust Design: The amplifier is designed to be stable and reliable across its operating range.
These features make the HMC8410LP2FETR suitable for applications in instrumentation, radar, electronic warfare, and communication systems.

Package

The HMC8410LP2FETR is packaged in a compact 2mm x 2mm, 8-lead LFCSP (Lead Frame Chip Scale Package).

Pinout

The HMC8410LP2FETR is a low-noise amplifier (LNA) produced by Analog Devices. It is housed in a compact 2x2 mm, 8-lead plastic surface-mount package (LP2). The pin count for this device is 8 pins.
Key functions and pin assignments include:
1. RF Input (Pin 1): This pin is used for connecting the radio frequency input signal.
2. GND (Pin 2): Ground connection pin.
3. Vgg (Pin 3): Gate voltage supply pin, used for biasing.
4. RF Ground (Pin 4): RF bypass ground pin.
5. RF Output/Vdd (Pin 5): Combined RF output and drain voltage supply pin.
6. Vdd (Pins 6 & 7): Drain voltage supply pins.
7. GND (Pin 8): Additional ground connection pin.
The HMC8410LP2FETR is designed for RF applications, providing low noise and high linearity across a frequency range from 0.6 GHz to 10 GHz. It is commonly used in applications such as cellular infrastructure, microwave radios, and test instrumentation.

Manufacturer

The HMC8410LP2FETR is manufactured by Analog Devices, Inc. Analog Devices is a multinational company that specializes in the design and manufacturing of analog, mixed-signal, and digital signal processing (DSP) integrated circuits. The company serves a wide range of industries, including communications, automotive, industrial, healthcare, and consumer electronics. Known for its high-performance products, Analog Devices provides solutions in areas like data conversion, signal processing, power management, and RF/microwave technologies.

Application

The HMC8410LP2FETR is a GaAs pHEMT MMIC Low Noise Amplifier designed for applications in RF and microwave communications. Its application areas include cellular base stations, satellite communications, test and measurement equipment, and radar systems. It is specifically suitable for use in wideband receivers and transceivers, providing low noise and high linearity performance across a wide frequency range.

Equivalent

The HMC8410LP2FETR is a wideband low noise amplifier (LNA). Equivalent products include:
1. Qorvo QPL9503 - A wideband LNA with similar frequency range and noise figure.
2. Analog Devices ADL5611 - Offers comparable gain and operates over a similar frequency range.
3. Mini-Circuits PSA4-5043+ - Provides wideband performance and low noise figure, suitable for similar applications.
Availability and exact specifications may vary, so it's advisable to compare detailed datasheets for precise compatibility.

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