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IKW30N60DTP

Name: IKW30N60DTP
Rating: 4.7 (12 reviews)

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Mfr.부분 #IKW30N60DTP
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데이터시트 IKW30N60DTP DataSheet
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사양

Brand	Infineon Technologies
Product Type	IGBT Transistors
Subcategory	IGBTs
Packaging	Tube
Maximum Gate Emitter Voltage	- 20 V, 20 V
Technology	Si

개요

Description

The IKW30N60DTP is an insulated gate bipolar transistor (IGBT) designed for high-performance power electronics applications. With a voltage rating of 600V and a current rating of 30A, it is primarily used in various industrial applications, such as motor drives, inverters, and power supplies.
This IGBT features a low on-state voltage drop, which improves efficiency and reduces power loss during operation. Its fast switching capabilities make it suitable for high-frequency applications, while the integrated diode allows for effective reverse recovery. The device is housed in a TO-247 package, ensuring good thermal performance and easy mounting.
Key specifications include a maximum gate-emitter voltage of ±20V and a maximum junction temperature of 150°C. Overall, the IKW30N60DTP is an excellent choice for engineers seeking reliable, efficient solutions in power conversion and control.

Features

The IKW30N60DTP is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage circuits.
2. Current Rating: Continuous drain current (I_D) of 30A, allowing for significant load handling.
3. R_DS(on): Low on-resistance, typically around 0.18 ohms, ensuring efficient power conduction and minimal heat generation.
4. Gate Threshold Voltage (V_GS(th)): Typically 2-4V, allowing for easy driving with standard logic levels.
5. Fast Switching: Optimized for high-speed operation, making it ideal for switching power supplies and converters.
6. Package: Usually available in a TO-247 package, facilitating effective heat dissipation.
7. Thermal Characteristics: Capable of high-temperature operation, ensuring reliability in demanding environments.
These features make the IKW30N60DTP suitable for applications like power inverters, motor drives, and other power management systems.

Package

The IKW30N60DTP is packaged in a TO-247 format, which is a power transistor package known for its robust thermal performance and suitability for high-power applications.

Pinout

The IKW30N60DTP is a power MOSFET with a total of 4 pins. Its pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage at this pin turns the device on or off.
2. Drain (D): This pin connects to the load; it is the output where the current flows out when the MOSFET is in the on-state.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It serves as the return path for the current.
The IKW30N60DTP is designed for high-voltage applications, with a voltage rating of 600V and a current rating of 30A, making it suitable for various power electronic applications, such as inverters and converters.

Manufacturer

The IKW30N60DTP is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and security technologies. The company is known for its innovations in power electronics, including IGBTs (Insulated Gate Bipolar Transistors) like the IKW30N60DTP, which are commonly used in various applications such as motor drives, renewable energy systems, and industrial equipment. Infineon is committed to sustainability and energy efficiency, making significant contributions to advancements in modern electronic systems.

Application

The IKW30N60DTP is an IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Key application areas include motor drives, induction heating, renewable energy systems (like solar inverters), UPS (uninterruptible power supplies), and industrial automation. Its high voltage and current handling capabilities make it suitable for efficient power conversion and control in these systems.

Equivalent

The IKW30N60DTP is an IGBT from the Infineon family. Equivalent products include the STGW30NC60WD from STMicroelectronics, the FGA30N60 from ON Semiconductor, and the MG30J6ES from Mitsubishi. Always verify specifications such as voltage, current ratings, and switching characteristics before substituting.