IPA60R160P6

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IPA60R160P6

  • 제조업체
  • Mfr.부분 #IPA60R160P6
  • 패키지 TO-220-3
  • 데이터시트
  • 재고 있음7876

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사양

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS P6
Factory Pack Quantity:Factory Pack Quantity 500
Subcategory Transistors
Part # Aliases SP001017082 IPA60R160P6XKSA1
Mounting Style Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 16.15 mm
Length 10.65 mm
Width 4.85 mm
Unit Weight 2 g
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 23.8 A
Rds On - Drain-Source Resistance 144 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 44 nC
Pd - Power Dissipation 34 W
Channel Mode Enhancement
Fall Time 5.8 ns
Rise Time 7.6 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 12.5 ns
Package/Case TO-220-3

개요

Description

The IPA60R160P6 is an advanced IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications in power electronics. It features a voltage rating of 600V and a current handling capability of 160A, making it suitable for various applications such as motor drives, inverters, and power supplies.
This IGBT is characterized by its low conduction and switching losses, which enhance overall efficiency in power conversion systems. The device also provides high switching speeds, enabling it to operate effectively in fast-switching applications. The P6 designation indicates it is part of a specific series that incorporates optimized features for improved thermal management and reliability.
Furthermore, the IPA60R160P6 typically includes a built-in anti-parallel diode, allowing for bidirectional current flow and facilitating its use in applications requiring regenerative braking. Overall, the IPA60R160P6 is an ideal choice for engineers seeking robust and efficient components for their power electronic designs.

Features

The IPA60R160P6 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 16A, allowing for substantial power handling.
3. Low R_DS(on): The device boasts a low on-resistance (R_DS(on)) of approximately 0.16 ohms, which reduces conduction losses and improves efficiency.
4. Fast Switching: The MOSFET is designed for fast switching capabilities, making it ideal for applications like switch-mode power supplies and motor controls.
5. Thermal Performance: It features a package that provides good thermal performance, ensuring reliability under high load conditions.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is around 3V to 5V, allowing for easier drive circuit designs.
These features make the IPA60R160P6 a versatile component in power electronics, including industrial drives and renewable energy systems.

Package

The IPA60R160P6 is typically available in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The IPA60R160P6 is an N-channel MOSFET from Infineon with a pin count of 4. Its pin configuration is as follows:
1. Gate (G): The control terminal that turns the MOSFET on and off.
2. Drain (D): The terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal connected to the ground or negative side of the circuit; current flows into the source when the MOSFET is on.
4. Tab: Often connected to the source for heat dissipation.
The IPA60R160P6 is designed for high-voltage applications (up to 600V) and features low on-resistance, making it suitable for various applications, including power supplies, motor control, and other switching applications.

Manufacturer

The IPA60R160P6 is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in designing and manufacturing a wide range of semiconductor and system solutions for various sectors, including automotive, industrial power control, and security technology. The company is known for its expertise in power semiconductors, particularly in the areas of MOSFETs and IGBTs, which are essential for efficient energy management and conversion in various applications. Infineon plays a significant role in advancing technologies related to energy efficiency, automotive electronics, and the Internet of Things (IoT).

Application

The IPA60R160P6 is an IGBT (Insulated Gate Bipolar Transistor) used primarily in applications such as motor drives, power inverters, renewable energy systems (like solar and wind), induction heating, and industrial automation. Its high voltage and current handling capabilities make it suitable for switching applications in power electronics, including UPS systems and electric vehicle drives.

Equivalent

The IPA60R160P6 is an IGBT from Infineon, with a voltage rating of 600V and a current rating of 160A. Equivalent products include:
1. FGA60N60 (Fairchild)
2. MG150Q2YS41 (Mitsubishi)
3. IRG4BC30KD (Infineon)
4. B1300-600 (STMicroelectronics)
Always check specific parameters like voltage, current, and package type before substituting.

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