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IPB025N10N3 G

Name: IPB025N10N3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 100V 180A D2PAK-6 OptiMOS 3

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Mfr.부분 #IPB025N10N3 G
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데이터시트 IPB025N10N3 G DataSheet
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Packaging	MouseReel
Standard Pack Qty	1000

개요

Description

The IPB025N10N3 G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in various applications. It features a low on-resistance value, allowing for reduced power loss and improved thermal efficiency, making it suitable for power supplies, DC-DC converters, and motor control systems.
Key specifications include a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of up to 25A. It also has a fast switching capability, which enhances its efficiency in high-frequency applications. The device is housed in a TO-220 package, providing effective heat dissipation.
The IPB025N10N3 G is often favored in automotive and industrial applications due to its reliability and performance under high-stress conditions. Overall, it plays a crucial role in modern electronic circuits where energy efficiency and thermal management are vital.

Features

The IPB025N10N3 G is a Power MOSFET designed for high-efficiency applications. Key features include:
1. Type: N-channel, which allows for efficient switching and low on-state resistance (R_DS(on)).
2. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium voltage applications.
3. Current Rating: The maximum continuous drain current (I_D) is 25A, which enables its use in high-current applications.
4. R_DS(on): Low on-resistance typically around 10 mΩ, which contributes to reduced power losses and improved thermal performance.
5. Package: Available in a TO-220 package, facilitating good thermal dissipation and ease of mounting.
6. Gate Threshold Voltage (V_GS(th)): Measured between 1V to 2V, allowing for efficient control.
7. Fast Switching: Suitable for use in switching power supplies and other applications requiring rapid switching times.
These characteristics make the IPB025N10N3 G ideal for various applications, including power management and motor control systems.

Package

The IPB025N10N3 G is packaged in a TO-220 form factor, which is a type of through-hole package commonly used for power MOSFETs. This package design allows for efficient heat dissipation and easy mounting on circuit boards.

Pinout

The IPB025N10N3 G is a N-channel MOSFET designed for power management applications. It features a total of 3 terminals: Gate (G), Drain (D), and Source (S).
- Pin Count: 3
- Pin Function:
1. Gate (G): Controls the switching of the device. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): The terminal through which the load current enters. It connects to the higher potential side in a circuit.
3. Source (S): The terminal through which the load current exits. It connects to the lower potential side.
This MOSFET is commonly used in applications like DC-DC converters, motor drives, and power switching. Its low on-resistance (R_DS(on)) and fast switching capabilities make it suitable for efficient power management.

Manufacturer

The IPB025N10N3 G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions and is known for its focus on power management, automotive, industrial, and security applications. The company plays a crucial role in supporting various sectors, including automotive electronics, renewable energy, and the Internet of Things (IoT). Infineon is recognized for its innovative technologies that enhance energy efficiency and performance in electronic systems.

Application

The IPB025N10N3 G is an N-channel MOSFET commonly used in power management applications, such as DC-DC converters, motor drives, and power inverters. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power supply designs in consumer electronics, automotive systems, and industrial automation.

Equivalent

The IPB025N10N3 G is an N-channel MOSFET with a maximum drain-source voltage of 100V and a continuous drain current of 25A. Equivalent products include the IRF3205, STP25NF10, and FQP30N10. Always verify specifications such as R_DS(on), gate threshold voltage, and package type before substituting.