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IPB64N25S3-20
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- Mfr.부분 #IPB64N25S3-20
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사양
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | IPB64N25 |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Part # Aliases | IPB64N25S32XT SP000876596 IPB64N25S320ATMA1 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 4.4 mm |
| Length | 10 mm |
| Width | 9.25 mm |
| Unit Weight | 0.139332 oz |
| Package / Case | D2PAK-3 (TO-263-3) |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Id - Continuous Drain Current | 64 A |
| Rds On - Drain-Source Resistance | 17.5 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 89 nC |
| Pd - Power Dissipation | 300 W |
| Channel Mode | Enhancement |
| Fall Time | 12 ns |
| Rise Time | 20 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 18 ns |
| Qualification | AEC-Q100 |
| REACH - SVHC | Details |
개요
Description
The IPB64N25S3-20 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a drain-source voltage rating of 25V and a continuous drain current rating of 64A, making it suitable for various power management tasks in consumer electronics, automotive applications, and industrial systems. This device is part of the Infineon’s CoolMOS series, known for its low conduction losses and fast switching capabilities, which enhance overall system efficiency.
The IPB64N25S3-20 exhibits a low R_DS(on), which minimizes power dissipation and thermal management requirements. It's typically housed in a DPAK or TO-220 package, allowing for easy integration into PCBs (Printed Circuit Boards). The device is optimized for applications like DC-DC converters, motor drives, and power supplies, where rapid switching and thermal performance are crucial. Overall, the IPB64N25S3-20 is an effective solution for engineers seeking reliable and efficient power handling in their designs.
The IPB64N25S3-20 exhibits a low R_DS(on), which minimizes power dissipation and thermal management requirements. It's typically housed in a DPAK or TO-220 package, allowing for easy integration into PCBs (Printed Circuit Boards). The device is optimized for applications like DC-DC converters, motor drives, and power supplies, where rapid switching and thermal performance are crucial. Overall, the IPB64N25S3-20 is an effective solution for engineers seeking reliable and efficient power handling in their designs.
Features
The IPB64N25S3-20 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 25V, making it suitable for low to medium voltage applications.
2. Current Capacity: With a continuous drain current (Id) rating of 64A, it can handle significant loads effectively.
3. Rds(on): It boasts a low on-resistance (Rds(on)), typically around 8.5 mΩ, which minimizes power loss and enhances efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 2-4V, allowing for easy driving with standard logic levels.
5. Package Type: It is available in a TO-220 package, facilitating efficient heat dissipation and ease of mounting in various applications.
6. Fast Switching: The device supports fast switching capabilities, making it ideal for applications like power supplies, motor drives, and DC-DC converters.
These features combined make the IPB64N25S3-20 an excellent choice for efficient power management solutions.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 25V, making it suitable for low to medium voltage applications.
2. Current Capacity: With a continuous drain current (Id) rating of 64A, it can handle significant loads effectively.
3. Rds(on): It boasts a low on-resistance (Rds(on)), typically around 8.5 mΩ, which minimizes power loss and enhances efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 2-4V, allowing for easy driving with standard logic levels.
5. Package Type: It is available in a TO-220 package, facilitating efficient heat dissipation and ease of mounting in various applications.
6. Fast Switching: The device supports fast switching capabilities, making it ideal for applications like power supplies, motor drives, and DC-DC converters.
These features combined make the IPB64N25S3-20 an excellent choice for efficient power management solutions.
Package
The IPB64N25S3-20 is packaged in a TO-220 format. This package type provides good thermal performance and is suitable for various power applications. It features three leads for mounting and can handle significant power dissipation.
Pinout
The IPB64N25S3-20 is an N-channel MOSFET, specifically designed for high-efficiency applications. It typically features a TO-220 package with a pin count of three.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin is where the current flows out from the MOSFET to the load.
3. Source (S): This pin is connected to the ground or negative side of the power supply, providing a return path for the current.
This component is used in various applications, including power management and switching circuits, due to its high voltage and current handling capabilities.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin is where the current flows out from the MOSFET to the load.
3. Source (S): This pin is connected to the ground or negative side of the power supply, providing a return path for the current.
This component is used in various applications, including power management and switching circuits, due to its high voltage and current handling capabilities.
Manufacturer
The IPB64N25S3-20 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power semiconductors, microcontrollers, and security technologies, catering to the growing demand for energy efficiency and connectivity in electronic systems. Infineon plays a significant role in advancing technologies such as electric vehicles, renewable energy, and the Internet of Things (IoT).
Application
The IPB64N25S3-20 is an N-channel MOSFET commonly used in applications such as power conversion, motor control, and switching regulators. It is suitable for high-efficiency power supplies, electric vehicles, and industrial automation. Its low on-resistance and fast switching capabilities make it ideal for applications requiring high current handling and thermal performance, such as DC-DC converters and inverter circuits.
Equivalent
The IPB64N25S3-20 is an N-channel MOSFET from Infineon. Equivalent products include the IRF640, STP64NF06, and BUK7Y2R8-60. Always verify specifications such as voltage, current ratings, and R_DS(on) before substituting.
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