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IPB80N06S2-07

Name: IPB80N06S2-07
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 55V 80A D2PAK-2 OptiMOS

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Mfr.부분 #IPB80N06S2-07
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데이터시트 IPB80N06S2-07 DataSheet
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Standard Pack Qty	1000

개요

Description

The IPB80N06S2-07 is a N-channel MOSFET designed for high-efficiency applications. With a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 80A, it is suitable for use in power management and conversion circuits. Its low on-resistance (Rds(on)) minimizes conduction losses, enhancing overall system efficiency.
This MOSFET features a robust thermal performance, allowing it to operate in demanding environments while maintaining reliability. It is commonly used in applications such as power supplies, motor drives, and automotive systems.
The IPB80N06S2-07 has a fast switching speed, making it ideal for applications requiring rapid on/off control. Additionally, it is available in a TO-220 package, facilitating heat dissipation and making it easy to integrate into various circuit designs.
In summary, the IPB80N06S2-07 is a powerful, efficient MOSFET suited for a wide range of applications requiring high performance and thermal stability.

Features

The IPB80N06S2-07 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is rated up to 80A at a specified temperature.
3. On-Resistance: It features a low on-resistance (R_DS(on)) typically around 7.5 mΩ at V_GS = 10V, leading to improved efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching.
5. Fast Switching Speed: Designed for high-speed applications, it offers fast switching characteristics, making it suitable for various power management tasks.
6. Package: Available in a TO-220 package, it provides good thermal performance and ease of mounting.
7. Applications: Ideal for DC-DC converters, motor drives, and power management systems.
These features make the IPB80N06S2-07 suitable for a wide range of electronic applications requiring high efficiency and robust performance.

Package

The IPB80N06S2-07 is packaged in a TO-220 format. This package type is known for its excellent thermal performance and ease of mounting, making it suitable for power applications.

Pinout

The IPB80N06S2-07 is a N-channel MOSFET designed for power switching applications. It has a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the pin where the main current enters the MOSFET. It is connected to the load in a circuit.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground in low-side switching applications.
The device is designed to handle high currents and voltages, making it suitable for various applications, including power management and motor control.

Manufacturer

The manufacturer of the IPB80N06S2-07 is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in designing and manufacturing a wide range of semiconductor solutions. Their products are utilized in various applications, including automotive, industrial electronics, power management, and security technologies. Infineon is known for its focus on innovation and sustainability, providing efficient and reliable solutions for energy management, connectivity, and smart technologies. The IPB80N06S2-07 is a power MOSFET, commonly used in power electronic applications due to its high performance and efficiency.

Application

The IPB80N06S2-07 is an N-channel MOSFET primarily used in power management applications. Its application areas include:
1. DC-DC converters
2. Power supply circuits
3. Motor control systems
4. LED drivers
5. Switch-mode power supplies (SMPS)
6. Battery management systems
Its low on-resistance and high switching speed make it suitable for efficient power handling in various electronic devices.

Equivalent

The IPB80N06S2-07 is an N-channel MOSFET. Equivalent products include the IRF3205, IRF540, and STP80NF06. Always verify specifications such as voltage, current rating, and R_DS(on) for compatibility in your specific application.