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IPD031N06L3 G

Name: IPD031N06L3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 60V 100A DPAK-2 OptiMOS 3

제조업체
Mfr.부분 #IPD031N06L3 G
패키지
데이터시트 IPD031N06L3 G DataSheet
재고 있음10140

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100% 원래 &새로운

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365 일 보장

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Packaging	MouseReel
Standard Pack Qty	2500

개요

Description

The IPD031N06L3 G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency switching applications, particularly in power management circuits. This MOSFET features low on-resistance (Rds(on)), which minimizes energy losses during operation, making it suitable for applications like DC-DC converters, motor drives, and power supplies.
With a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 31A, the IPD031N06L3 G can handle significant power levels. Its fast switching capabilities also contribute to improved performance in high-frequency applications. The device is housed in a TO-220 package, ensuring efficient heat dissipation, which is crucial for maintaining reliability in demanding environments.
Overall, the IPD031N06L3 G is a versatile component for engineers looking to enhance the efficiency and performance of their electronic designs.

Features

The IPD031N06L3 G is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for moderate voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 31A, allowing it to handle high load currents.
3. R_DS(on): The on-resistance is low (around 3.1 mΩ at V_GS = 10V), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 3V, allowing for easy drive with standard logic levels.
5. Package Type: Comes in a TO-220 package, facilitating good thermal performance with adequate heat dissipation.
6. Fast Switching Speed: It has a high-speed switching capability, making it suitable for applications like DC-DC converters and motor control.
Overall, the IPD031N06L3 G is a robust choice for energy-efficient designs in various electronic applications.

Package

The IPD031N06L3 G is housed in a DPAK (or TO-252) package type, which is designed for surface mounting. This package features a compact footprint and good thermal performance, making it suitable for various applications in power management.

Pinout

The IPD031N06L3 G is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current enters the MOSFET. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET. It typically connects to the ground in low-side switching applications.
The device is designed for high-efficiency applications, such as power management and DC-DC converters, and features low on-resistance and fast switching capabilities.

Manufacturer

The IPD031N06L3 G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power management, sensor technology, and security solutions. Infineon plays a significant role in the development of energy-efficient technologies and is a key player in the semiconductor industry, focusing on high-performance components such as MOSFETs, IGBTs, and microcontrollers.

Application

The IPD031N06L3 G is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drivers, and power supply circuits. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities, making it ideal for use in consumer electronics, automotive systems, and industrial automation.

Equivalent

The IPD031N06L3 G is an N-channel MOSFET. Equivalent products include the IRF3205, STP55NF06L, and BSC025N06LS. Check datasheets for specific parameters like RDS(on), gate threshold voltage, and package type to ensure compatibility for your application.