IPD50R500CE

The IPD50R500CE is a silicon power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of up to 50A, making it suitable for high-voltage and high-current applications like power supplies, motor drives, and industrial equipment.
This MOSFET is renowned for its low on-resistance (R_DS(on)), which minimizes conduction losses and enhances overall efficiency. It also possesses fast switching capabilities, allowing for rapid transitions between on and off states, making it ideal for switch-mode power supplies (SMPS) and other applications requiring efficient power management.
The device is typically housed in a TO-247 package, ensuring robust thermal performance and ease of heat dissipation. Overall, the IPD50R500CE is a versatile component well-suited for power electronic designs requiring reliable performance and high efficiency.

The IPD50R500CE is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 50A, providing robust performance in power circuits.
3. On-Resistance: With a low on-resistance (R_DS(on)) of approximately 0.5Ω, it offers efficient power handling and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, enabling easy drive from standard logic levels.
5. Thermal Performance: It features a high thermal dissipation capability, allowing for efficient operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat sinking.
7. Fast Switching: Ideal for applications requiring fast switching speeds, such as power supplies and motor drives.
Overall, the IPD50R500CE is well-suited for applications in industrial and automotive sectors.

The IPD50R500CE is packaged in a DPAK (or TO-252) package type. This surface-mount package is designed for power applications, providing efficient thermal performance and compact sizing.

The IPD50R500CE is an N-channel MOSFET from Infineon Technologies. It features a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The terminal through which the load current flows out.
3. Source (S): The terminal through which current flows into the MOSFET.
For proper operation, the Gate must be driven with a voltage relative to the Source. The Drain and Source are connected to the load and power supply, respectively. This MOSFET is designed for high efficiency in power applications, with a maximum continuous drain current of 50 A and a maximum drain-source voltage of 500 V.

The IPD50R500CE is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company focuses on innovations that enable energy efficiency, mobility, and security in connected applications.

The IPD50R500CE is an N-channel MOSFET commonly used in various applications, including power supplies, motor drives, and DC-DC converters. Its high voltage and current handling capabilities make it suitable for automotive applications, renewable energy systems, and industrial automation. Additionally, it is used in switching applications due to its low on-resistance and fast switching speed, improving efficiency in electronic circuits.

The IPD50R500CE is an N-channel MOSFET with a 500V rating and 50A current capacity. Equivalent products include:
- IRF840
- STP50NF50
- BUK956R-600
- PSMN2R5-600B
These alternatives can vary in specifications, so it's essential to check datasheets for exact parameters such as R_DS(on), gate charge, and thermal characteristics.