IPD70R1K4P7S

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IPD70R1K4P7S

MOSFETs CONSUMER

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개요

Description

The IPD70R1K4P7S is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is designed for high-power applications, such as inverters, motor drives, and industrial equipment. The device features a voltage rating of 700V and a current rating of 70A, making it suitable for medium to high voltage and current demands.
Key specifications include a low switching loss, which enhances efficiency, and a robust thermal performance, allowing for reliable operation in demanding environments. The IGBT is typically used in conjunction with a gate driver for optimal performance. Its package is designed to facilitate efficient heat dissipation, contributing to its reliability and lifespan in applications.
Overall, the IPD70R1K4P7S combines high efficiency with strong performance metrics, making it a popular choice for engineers working on power electronics solutions.

Features

The IPD70R1K4P7S is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency applications. Key features include:
1. Voltage Rating: 700V, suitable for medium-voltage applications.
2. Current Rating: 70A, allowing for substantial power handling.
3. Low Conduction Losses: Optimized for reduced energy losses during operation, enhancing efficiency.
4. Fast Switching Speed: Facilitates high-frequency operation, beneficial in applications like inverters and converters.
5. Thermal Performance: Designed to operate in high-temperature environments with robust thermal management.
6. Package Type: Typically available in a TO-220 or similar package, allowing for easy mounting and heat dissipation.
These features make the IPD70R1K4P7S suitable for applications in renewable energy, motor drives, and industrial power supplies.

Package

The IPD70R1K4P7S is typically packaged in a TO-247 format. This packaging provides efficient thermal management and is suited for high-power applications.

Pinout

The IPD70R1K4P7S is an N-channel power MOSFET produced by Infineon Technologies. It features a total of 5 pins. The functions of these pins are as follows:
1. Gate (G): Controls the switching of the MOSFET; applying a voltage here turns the device on.
2. Drain (D): The main current-carrying terminal; current flows from this pin when the MOSFET is on.
3. Source (S): The terminal through which current exits the MOSFET when it is conducting; typically connected to ground in common-source configurations.
The specific pin configuration is standard for discrete MOSFET packages, allowing for easy integration into various electronic circuits. The MOSFET is designed for high efficiency and performance, suitable for applications in power management and switching.

Manufacturer

The IPD70R1K4P7S is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in producing a wide range of semiconductor solutions that cater to various industries, including automotive, industrial power control, and IoT. Infineon is known for its expertise in power semiconductors, which are critical for managing electrical energy efficiently in various applications. Their products include transistors, diodes, microcontrollers, and sensors, contributing to advancements in energy efficiency and sustainability across multiple sectors.

Application

The IPD70R1K4P7S is a N-channel MOSFET commonly used in power applications, including industrial motor control, power supplies, DC-DC converters, and inverters. It is suitable for high-efficiency switching applications due to its low on-resistance and high current handling capabilities. Additionally, it can be found in automotive applications, such as electric vehicles and battery management systems, as well as in consumer electronics for power management.

Equivalent

The IPD70R1K4P7S is a 700V, 1.4Ω N-channel MOSFET. Equivalent products include:
1. IRF840
2. STP7NK70Z
3. FQP50N60
4. MTP50N70
5. IXFH40N70P
Always verify specifications like voltage, current rating, and RDS(on) before substituting.

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