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IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
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- Mfr.부분 #IPD70R360P7SAUMA1
- 패키지
- 데이터시트 IPD70R360P7SAUMA1 DataSheet
- 재고 있음5248
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사양
| Series | CoolMOS™ P7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.4 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 517 pF @ 400 V |
| Power Dissipation (Max) | 59.4W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IPD70 |
개요
Description
Key specifications include a maximum continuous drain-source voltage (VDS) of 360V and a continuous drain current (ID) rating of 70A, making it capable of handling significant power loads. Its low thermal resistance ensures efficient heat dissipation, enhancing reliability and performance.
The device features advanced packaging, which contributes to improved thermal management and ease of integration into various circuits. Its robust design and high-speed switching capabilities facilitate optimal performance in demanding environments. As a result, the IPD70R360P7SAUMA1 is an excellent choice for applications requiring high efficiency and reliability in power conversion and control.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 360V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 70A, ensuring robust performance in demanding conditions.
3. R_DS(on): The on-resistance is low, typically around 0.175 ohms at a gate voltage of 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive compatibility.
5. Thermal Management: It features a TO-247 package for improved thermal dissipation, supporting higher power applications.
6. Fast Switching: Designed for fast switching capabilities, making it ideal for use in converters and inverters.
These features make the IPD70R360P7SAUMA1 suitable for a variety of applications, including automotive, industrial, and renewable energy systems.
Package
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Body (B) - Internal connection that aids in the device's operation.
This MOSFET is notable for its low on-resistance (R_DS(on)) and high current handling capacity, making it suitable for power management in applications such as motor drivers, power supplies, and converters.
Manufacturer
Application
Equivalent
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