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IPD90N06S405ATMA2
MOSFET N-CH 60V 90A TO252-31
- 제조업체
- Mfr.부분 #IPD90N06S405ATMA2
- 패키지
- 데이터시트 IPD90N06S405ATMA2 DataSheet
- 재고 있음8305
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365 일 보장
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사양
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 90A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5.1mOhm @ 90A, 10V |
| Vgs(th)(Max)@Id | 4V @ 60µA |
| GateCharge(Qg)(Max)@Vgs | 81 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6500 pF @ 25 V |
| PowerDissipation(Max) | 107W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO252-3-11 |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 90A, making it suitable for high-current applications. The MOSFET is packaged in a TO-220 format, allowing for effective thermal management.
The IPD90N06S405ATMA2 also offers fast switching capabilities, which enhance overall system performance. It is commonly employed in both consumer and industrial electronics, where reliability and efficiency are crucial. When selecting a MOSFET, factors such as gate voltage, switching speed, and thermal performance should be considered to ensure optimal operation in the intended application.
Features
1. Voltage Rating: Capable of handling up to 60V, making it suitable for various power supply applications.
2. Current Rating: Supports continuous drain current up to 90A, which allows for high load capabilities.
3. RDS(on): Low on-resistance (typically around 4.5 mΩ), resulting in reduced power losses and improved thermal performance.
4. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in converter circuits.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Gate Threshold Voltage: Low gate threshold for enhanced drive capability.
7. Applications: Commonly used in power supplies, motor control, and other applications requiring efficient switching.
These features make the IPD90N06S405ATMA2 suitable for modern power electronic designs that demand high performance and efficiency.
Package
Pinout
Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate turns the device on or off.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the on-state.
3. Source (S): The source pin is where the current exits the MOSFET.
4. Body Diode (integrated): This internal component allows current to flow in the reverse direction when the MOSFET is off, providing protection in certain applications.
5. Tab (Thermal Pad): This is typically used for heat dissipation and may connect to the source or be electrically isolated.
The device is designed for high efficiency and low on-resistance applications, making it suitable for various electronic circuits.
Manufacturer
Application
Equivalent
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