IPL65R070C7AUMA1

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IPL65R070C7AUMA1

MOSFET N-CH 650V 28A 4VSON

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사양

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series CoolMOS™ C7
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 70mOhm @ 8.5A, 10V
Vgs(th)(Max)@Id 4V @ 850µA
GateCharge(Qg)(Max)@Vgs 64 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3020 pF @ 100 V
PowerDissipation(Max) 169W (Tc)
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-VSON-4

개요

Description

The IPL65R070C7AUMA1 is a high-performance N-channel MOSFET designed for various power conversion applications. It belongs to the Infineon CoolMOS series, which emphasizes energy efficiency and thermal performance. With a maximum drain-source voltage of 650V, it can handle high-voltage applications efficiently.
This MOSFET features a low on-resistance (RDS(on)), which minimizes conduction losses, making it ideal for use in switch-mode power supplies, inverters, and motor drives. Its fast switching capabilities enable higher efficiency in high-frequency applications, reducing heat generation and improving overall system performance.
The device is housed in a TO-247 package, which provides good thermal management and ease of mounting. Its robust design ensures reliability in demanding environments. Overall, the IPL65R070C7AUMA1 is suitable for engineers seeking reliable and efficient components for power electronics applications, contributing to energy savings and enhanced system performance.

Features

The IPL65R070C7AUMA1 is a high-performance MOSFET from Infineon, specifically designed for applications requiring efficient power management. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
- Current Rating: The device supports a continuous drain current (I_D) of 70A, offering robust performance in demanding conditions.
- Low R_DS(on): With a low on-resistance, it ensures minimal conduction losses, enhancing efficiency in power conversion systems.
- Thermal Performance: It features a high thermal resistance and can operate at elevated temperatures, ensuring reliability.
- Fast Switching: The MOSFET is designed for rapid switching capabilities, which is advantageous in high-frequency applications.
- Package Type: Typically comes in a TO-247 package, providing easy mounting and heat dissipation.
Overall, the IPL65R070C7AUMA1 is ideal for use in industrial applications, power supplies, and renewable energy systems, where efficiency and performance are crucial.

Package

The IPL65R070C7AUMA1 is packaged in a TO-247 format. This package type is designed for high-power applications, providing good thermal performance and mechanical stability.

Pinout

The IPL65R070C7AUMA1 is a high-power MOSFET from Infineon Technologies, specifically designed for energy-efficient applications. It features a total of 7 pins. The primary functions of these pins include:
1. Gate (G): Controls the MOSFET's ON/OFF state.
2. Drain (D): Connects to the load; current flows out of this terminal when the device is on.
3. Source (S): Connects to the ground or negative terminal; current enters through this terminal.
The device is commonly used in power management, switching applications, and inverters due to its high efficiency and low on-resistance. It is suitable for a variety of applications, including automotive and industrial sectors. Always refer to the datasheet for detailed pinout and specifications.

Manufacturer

The IPL65R070C7AUMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. Infineon is known for its focus on energy efficiency and performance, making it a key player in the development of smart technologies and applications.

Application

The IPL65R070C7AUMA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial motor drives, power supplies, renewable energy systems (like solar inverters), and electric vehicles. Its ability to handle high voltage and current levels makes it suitable for efficient power conversion and control in demanding environments.

Equivalent

The IPL65R070C7AUMA1 is an IGBT module from Infineon. Equivalent products include the IXGH40N65C3 from IXYS, the FGH60N65SMD from Fairchild, and the FZ1200R12KF4 from Infineon. Ensure to check specifications like voltage rating, current rating, and switching characteristics for compatibility.

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