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IPW60R024CFD7
- 제조업체
- Mfr.부분 #IPW60R024CFD7
- 패키지
- 데이터시트 IPW60R024CFD7 DataSheet
- 재고 있음2737
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365 일 보장
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사양
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
개요
Description
The IPW60R024CFD7 is a high-performance N-channel MOSFET designed for various applications, including power management and switching circuits. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 24A, making it suitable for high-voltage applications. The device is characterized by low on-resistance (R_DS(on)), which minimizes power losses and enhances efficiency. With a fast switching speed, it supports high-frequency operations, making it ideal for use in power supplies, inverters, and motor control systems. The IPW60R024CFD7 is often packaged in a TO-247 format, facilitating effective heat dissipation and ease of mounting. Its reliability and robustness make it a popular choice among engineers in the design of efficient power electronic systems.
Features
The IPW60R024CFD7 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: The device supports continuous drain current (I_D) of up to 24A, making it suitable for power applications.
3. Low On-Resistance: With a low R_DS(on) rating, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: The device offers rapid switching capabilities, ideal for high-frequency applications.
5. Thermal Performance: Equipped with a robust thermal design, it features a high maximum junction temperature, ensuring reliability under varied conditions.
6. Packaging: Typically available in a TO-220 package, facilitating heat dissipation and easy mounting on PCBs.
These features make the IPW60R024CFD7 suitable for use in power supplies, motor drives, and other high-voltage applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: The device supports continuous drain current (I_D) of up to 24A, making it suitable for power applications.
3. Low On-Resistance: With a low R_DS(on) rating, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: The device offers rapid switching capabilities, ideal for high-frequency applications.
5. Thermal Performance: Equipped with a robust thermal design, it features a high maximum junction temperature, ensuring reliability under varied conditions.
6. Packaging: Typically available in a TO-220 package, facilitating heat dissipation and easy mounting on PCBs.
These features make the IPW60R024CFD7 suitable for use in power supplies, motor drives, and other high-voltage applications.
Package
The IPW60R024CFD7 is packaged in a TO-247 format. This type of package is designed for high-power applications, offering improved heat dissipation and robustness for power MOSFETs.
Pinout
The IPW60R024CFD7 is a N-channel MOSFET from Infineon Technologies. It features a total of 5 pins, which are typically configured as follows:
1. Gate (G) - Controls the MOSFET's switching; used to turn the device on/off.
2. Drain (D) - The terminal through which the current exits the MOSFET. It connects to the load.
3. Source (S) - The terminal through which the current enters the MOSFET. It connects to the ground or negative side of the circuit.
4. Substrate (B) - Internal connection used for enhancing the device's performance; usually connected to the source in applications.
5. Tab (T) - Often connected to the drain for heat dissipation and provides a physical mounting point.
The IPW60R024CFD7 is designed for high efficiency and can handle a maximum drain-source voltage of 600V with a continuous drain current capability of 60A, making it suitable for various power applications, including industrial and automotive systems.
1. Gate (G) - Controls the MOSFET's switching; used to turn the device on/off.
2. Drain (D) - The terminal through which the current exits the MOSFET. It connects to the load.
3. Source (S) - The terminal through which the current enters the MOSFET. It connects to the ground or negative side of the circuit.
4. Substrate (B) - Internal connection used for enhancing the device's performance; usually connected to the source in applications.
5. Tab (T) - Often connected to the drain for heat dissipation and provides a physical mounting point.
The IPW60R024CFD7 is designed for high efficiency and can handle a maximum drain-source voltage of 600V with a continuous drain current capability of 60A, making it suitable for various power applications, including industrial and automotive systems.
Manufacturer
The IPW60R024CFD7 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in various technologies such as power semiconductors, microcontrollers, and sensors. The company serves multiple sectors including automotive, industrial, and consumer electronics, providing solutions that enhance energy efficiency, safety, and connectivity. Infineon is known for its innovation in power management and wide bandgap semiconductors, contributing significantly to advancements in electric mobility and renewable energy applications.
Application
The IPW60R024CFD7 is an IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial motor drives, power supplies, and renewable energy systems such as solar inverters. Its robust performance and efficiency make it suitable for high-voltage and high-current applications, enabling effective power conversion and control in electric vehicles and rail traction systems as well.
Equivalent
The IPW60R024CFD7 is a N-channel MOSFET. Equivalent products include the IRF260, STP60NF06, and FQP60N06. Always verify specifications such as voltage, current, package type, and Rds(on) to ensure compatibility for your specific application.
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