IPW60R075CP

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IPW60R075CP

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  • Mfr.부분 #IPW60R075CP
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사양

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS CE
Factory Pack Quantity:Factory Pack Quantity 240
Subcategory Transistors
Part # Aliases SP000358192 IPW6R75CPXK IPW60R075CPFKSA1
Mounting Style Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 21.1 mm
Length 16.13 mm
Width 5.21 mm
Unit Weight 0.211644 oz
Package / Case TO-247-3
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 39 A
Rds On - Drain-Source Resistance 68 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 116 nC
Pd - Power Dissipation 313 W
Channel Mode Enhancement
Fall Time 7 ns
Rise Time 17 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 40 ns

개요

Description

The IPW60R075CP is a high-performance N-channel MOSFET designed for various power applications, including converters and inverters. It features a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 75A, making it suitable for high-voltage and high-current applications. With a low RDS(on) value, it ensures efficient operation and minimal power loss during switching.
The device is built using advanced trench technology, which enhances its switching speed and thermal performance. Its fast switching capabilities make it ideal for high-frequency applications, such as in power supplies and motor drives. The IPW60R075CP also includes a robust gate oxide structure that provides reliable performance under different operating conditions.
This MOSFET is housed in a TO-220 package, allowing for effective heat dissipation and ease of integration into various electronic designs. Overall, the IPW60R075CP is a reliable choice for engineers seeking efficient power management solutions in demanding environments.

Features

The IPW60R075CP is a Power MOSFET from Infineon, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 75A, allowing for robust power applications.
3. R_DS(on): The on-resistance is low, typically around 0.075 ohms, which enhances efficiency by reducing power losses during operation.
4. Fast Switching: It supports high-speed switching, beneficial for use in applications like switch-mode power supplies (SMPS) and inverters.
5. Thermal Performance: The package design ensures good thermal management, contributing to reliability and longevity in demanding environments.
6. TO-220 Package: The IPW60R075CP comes in a TO-220 package, allowing for easy integration and effective heat dissipation.
Overall, it's ideal for applications requiring high power density and efficiency, such as industrial drives, solar inverters, and high-voltage power supplies.

Package

The IPW60R075CP is packaged in a TO-247 form factor, which is a type of power transistor package designed for high-power applications. It features a sturdy construction for better thermal dissipation and is commonly used in power electronics.

Pinout

The IPW60R075CP is an N-channel MOSFET designed for high-efficiency applications. It features a total of 5 pins. The pin configuration typically includes:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load is connected and through which current flows when the MOSFET is on.
3. Source (S): This pin connects to the ground or the negative side of the power supply.
The specific pinout is as follows (when viewed from the front of the package):
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Source (for thermal and electrical performance)
- Pin 5: Drain
The IPW60R075CP is commonly used in applications such as power supplies, motor drives, and other high-frequency switching applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IPW60R075CP is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and microcontrollers. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security. Infineon is known for its innovation in power management solutions, making it a key player in the semiconductor market.

Application

The IPW60R075CP is an N-channel MOSFET primarily used in power electronics applications, including:
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters.
2. Motor Drives: Controlling electric motors in industrial and automotive applications.
3. Inverters: Utilized in renewable energy systems like solar inverters.
4. Lighting: Driving LED lighting systems.
5. Consumer Electronics: Used in various devices for efficient power management.
Its low on-resistance and high voltage rating make it suitable for these applications.

Equivalent

The IPW60R075CP is an N-channel MOSFET from Infineon, featuring a rated voltage of 600V and a continuous drain current of 75A. Equivalent products include the STP60NF06 from STMicroelectronics, IRF840 from Infineon, and the FQD20N60 from Fairchild Semiconductor. Always verify specifications such as RDS(on), VGS, and switching characteristics for compatibility in specific applications.

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