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IPW60R120P7
N-CHANNEL POWER MOSFET
- 제조업체
- Mfr.부분 #IPW60R120P7
- 패키지 TO-247
- 데이터시트 IPW60R120P7 DataSheet
- 재고 있음4154
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사양
| Package | Bulk |
| ProductStatus | Active |
개요
Description
Key features include low on-resistance, fast switching capabilities, and high reliability, which contribute to reduced power losses and improved thermal performance. The device typically comes in a TO-247 package, making it easy to integrate into existing designs. Its characteristics make it ideal for use in applications such as resonant converters, inverters, and other high-frequency switching environments.
Overall, the IPW60R120P7 is a versatile component for engineers seeking effective solutions in power management and energy efficiency.
Features
1. Voltage Rating: Operates up to 600V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 120A, making it ideal for robust power management.
3. Low Gate Charge: Offers a low total gate charge (around 60nC), facilitating faster switching speeds and improved efficiency.
4. RDS(on): Exhibits a low on-resistance (approximately 0.12Ω), minimizing conduction losses.
5. Thermal Performance: Features a TO-247 package, which enhances heat dissipation, ensuring reliable operation under high load.
6. Fast Switching: Suitable for high-frequency applications due to its quick switching capabilities.
7. Applications: Commonly used in power supplies, motor drives, and renewable energy systems.
These characteristics make the IPW60R120P7 a versatile choice for engineers seeking high-efficiency power solutions.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D): The terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal connected to ground or the negative side of the circuit; current flows from source to drain when the MOSFET is conducting.
4. Gate (G): Again, used for control as in the first pin.
5. Drain (D): Second drain pin for improved current handling.
6. Source (S): Second source pin for improved thermal dissipation.
This MOSFET is designed for high-voltage applications (rated for 600V) and is suitable for various switching applications in power supplies and motor drives.
Manufacturer
Application
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