이미지는 참조용만

IPW65R065C7

Name: IPW65R065C7
Rating: 4.7 (12 reviews)

제조업체
Mfr.부분 #IPW65R065C7
패키지
데이터시트
재고 있음4501

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Technology	Si
Packaging	Tube
Brand	Infineon Technologies
Product Type	MOSFETs
Series	CoolMOS C7
Factory Pack Quantity:Factory Pack Quantity	240
Subcategory	Transistors
Part # Aliases	SP001080116 IPW65R065C7XKSA1
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Height	21.1 mm
Length	16.13 mm
Width	5.21 mm
Unit Weight	0.211644 oz
Package / Case	TO-247-3
Configuration	Single
Tradename	CoolMOS
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	33 A
Rds On - Drain-Source Resistance	65 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	64 nC
Pd - Power Dissipation	171 W
Channel Mode	Enhancement
Fall Time	7 ns
Rise Time	14 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	72 ns
Typical Turn-On Delay Time	17 ns

개요

Description

The IPW65R065C7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring high efficiency and fast switching speeds. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 65A, making it suitable for high-voltage power conversion applications like switch-mode power supplies, motor drives, and renewable energy systems.
This MOSFET is built using Infineon's CoolMOS technology, which provides lower conduction and switching losses compared to traditional MOSFETs. Its R_DS(on) is approximately 0.065 ohms, ensuring efficient operation. Additionally, it has a low gate charge, facilitating faster switching and reduced power dissipation during operation.
The IPW65R065C7 comes in a TO-220 package, allowing for easy heat dissipation and integration into various circuits. Its reliability and performance make it a popular choice among engineers for applications requiring robust power management solutions.

Features

The IPW65R065C7 is a power MOSFET from Infineon Technologies, specifically part of the CoolMOS™ series. It features:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: Can handle up to 65A continuous drain current, providing robust performance.
3. RDS(on): Low on-resistance of around 0.065 ohms, which minimizes conduction losses and improves efficiency.
4. High-Speed Switching: Designed for fast switching applications, enhancing performance in power conversion and management systems.
5. Thermal Performance: Good thermal stability with a maximum junction temperature of 150°C, helping to maintain reliability under varying conditions.
6. Gate Charge: Low total gate charge (Qg) enables efficient driving with minimal power loss.
7. Applications: Ideal for use in switch-mode power supplies (SMPS), automotive power applications, and renewable energy systems.
Overall, the IPW65R065C7 is engineered for efficiency and reliability in demanding power applications.

Package

The IPW65R065C7 is typically packaged in a TO-247 style package, which is designed for high-power applications. This package type allows for efficient heat dissipation and is suitable for mounting on heatsinks.

Pinout

The IPW65R065C7 is an N-channel MOSFET with a total of 6 pins. It is designed for high-performance applications, particularly in power electronics. The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal through which the load current flows.
3. Source (S): The terminal connected to the ground or negative side of the power supply.
The additional pins are typically for thermal and mechanical mounting purposes, depending on the package type (usually a TO-220 or similar).
The key specifications of the IPW65R065C7 include a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 65A. It is optimized for high-efficiency switching applications, such as inverters, converters, and motor drives.

Manufacturer

The IPW65R065C7 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics. Infineon is known for its focus on innovation and sustainability, developing products that enhance energy efficiency and support advanced technologies such as electric vehicles and renewable energy systems. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates globally, with a strong emphasis on R&D and a commitment to quality and performance in its semiconductor solutions.

Application

The IPW65R065C7 is a 650V N-channel MOSFET primarily used in power electronics applications. Its key areas include industrial motor drives, power supplies, renewable energy systems (like solar inverters), electric vehicles, and high-efficiency converters. The device's low on-resistance and fast switching capabilities make it suitable for high-performance applications, enhancing energy efficiency and thermal management.

Equivalent

The IPW65R065C7 is an N-channel power MOSFET with a voltage rating of 650V and a continuous current rating of 65A. Equivalent products include the STP65N65M5, APT65M65B2, and FGH60N65SMD. Ensure to verify parameters like Vds, Id, Rds(on), and package type when selecting an equivalent.