IR2136STRPBF

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IR2136STRPBF

IR2136 - GATE DRIVER

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사양

Package Bulk
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType 3-Phase
NumberofDrivers 6
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 3V
Current-PeakOutput(SourceSink) 200mA, 350mA
InputType Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 125ns, 50ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 28-SOIC (0.295, 7.50mm Width)

개요

Description

The IR2136STRPBF is an integrated circuit designed by Infineon Technologies, primarily used for driving power MOSFETs and IGBTs in half-bridge configurations. It features high-voltage, high-speed capabilities, making it suitable for various power electronics applications, including motor drives, power supplies, and lighting ballasts.
Key features of the IR2136STRPBF include:
1. Half-Bridge Driver: It is optimized for driving half-bridge circuits, which are commonly used in inverter stages and motor control systems.

2. High Voltage Tolerance: The IC can handle high voltages, thanks to its robust isolation between the logic and power sections.
3. Floating Channel Design: This allows it to drive high-side switches effectively in high-voltage applications.
4. Integrated Dead Time and Shoot-Through Protection: These features prevent both MOSFETs in the half-bridge from conducting simultaneously, avoiding short circuits.
5. Undervoltage Lockout: Ensures the IC operates reliably within specified voltage limits.
The IR2136STRPBF is encapsulated in a standard surface-mount package for easy integration into printed circuit boards, offering reliability and efficiency in managing high-power electronic systems.

Features

The IR2136STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with three independent high- and low-side referenced output channels. Key features of this device include:
1. High Voltage Capability: Designed for up to 600V, making it suitable for high-voltage applications.
2. Floating Channel: Capable of operating up to 600V for bootstrap operation.
3. Gate Drive Supply Range: Compatible with a wide range of gate drive supply voltages from 10V to 20V.
4. Undervoltage Lockout Protection: Provides protection for all channels to safeguard the circuit.
5. Programmable Dead-Time: Allows users to set dead-time to prevent shoot-through in half-bridge configurations.
6. CMOS Schmitt-triggered Inputs: Designed for noise immunity and fast switching.
7. Integrated Bootstrap Diode: Simplifies circuit design by eliminating the need for an external bootstrap diode.
8. Low Output Impedance: Ensures efficient driving of MOSFETs and IGBTs.
9. Propagation Delay: Offers matched propagation delay for high-speed operation.
These features make the IR2136STRPBF an ideal choice for motor drives, inverters, and other applications requiring efficient and reliable high-voltage switching.

Package

The IR2136STRPBF is typically packaged in a Surface Mount Device (SMD) format, specifically in a 44-Lead Small Outline Integrated Circuit (SOIC) package. This package type facilitates easy mounting onto circuit boards and is designed for high voltage, high-speed applications.

Pinout

The IR2136STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with three-phase bridge-drive capability. It has a total of 28 pins. This device is designed to drive power transistors in a three-phase configuration and contains three independent high-side and low-side output channels.
Key functions include:
1. High-Side and Low-Side Drivers: It provides independent high-side and low-side referenced output channels for each phase, which are used to control the gate of MOSFETs or IGBTs.

2. Floating Channel: Each high-side driver is capable of working with a floating channel that can handle voltages up to 600V, allowing the driver to effectively control the high-side power transistors in a bridge configuration.
3. Undervoltage Lockout: Both high-side and low-side drivers are equipped with undervoltage lockout to prevent malfunction when the supply voltage is below a certain threshold.
4. Deadtime Control: It features internal deadtime control to prevent shoot-through, which occurs when both high-side and low-side transistors are on simultaneously.
This device is typically used in motor drive applications and other power conversion systems where efficient driving of high-voltage transistors is required.

Manufacturer

The IR2136STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in a wide range of electronics, including power semiconductors, automotive and industrial electronics, and security solutions. It is a leading player in the semiconductor industry, known for its innovation and reliability in producing electronic components that are crucial for various applications such as automotive, industrial power control, security, and the Internet of Things (IoT). The company continues to focus on developing solutions that contribute to a more sustainable and energy-efficient world.

Application

The IR2136STRPBF is a high-voltage, three-phase gate driver IC typically used in motor control applications. Its application areas include industrial motor drives, HVAC systems, home appliances, and electric vehicle inverters. The IC is designed to efficiently drive power MOSFETs and IGBTs, making it suitable for controlling AC and brushless DC motors.

Equivalent

Equivalent products to the IR2136STRPBF, a high-voltage, high-speed power MOSFET and IGBT driver, include the following chips: IR2133, IR2135, IR21362, and 6EDL04I06NT. These drivers feature three half-bridge drivers with built-in dead time and shoot-through protection, suitable for similar applications in motor control and power management. Always check datasheets for compatibility and specifications before substituting.

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