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IRF1310NSTRLPBF
MOSFET N-CH 100V 42A D2PAK
- 제조업체
- Mfr.부분 #IRF1310NSTRLPBF
- 패키지
- 데이터시트 IRF1310NSTRLPBF DataSheet
- 재고 있음11635
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사양
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 42A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 36mOhm @ 22A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1900 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 160W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
개요
Description
The IRF1310NSTRLPBF has a gate threshold voltage ranging from 2V to 4V, allowing it to be driven by low-voltage logic levels, which enhances its compatibility with microcontrollers and other digital devices. Its package is typically in a TO-220 format, providing efficient thermal dissipation.
This MOSFET is ideal for applications requiring rapid switching speeds and high efficiency, making it popular in power supply circuits, LED drivers, and automotive electronics. Overall, the IRF1310NSTRLPBF is a versatile and reliable component in modern electronic designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is up to 29A, allowing it to handle significant load currents.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.06 ohms at V_GS = 10V, ensuring efficient power delivery with minimal heat generation.
4. Gate Threshold Voltage: The typical gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling low-voltage drive capability.
5. Package: The device comes in a TO-220 package, providing good thermal management for high-power applications.
6. Fast Switching: It exhibits fast switching speeds, making it suitable for PWM and other high-frequency applications.
7. Applications: Commonly used in motor control, power supplies, and other high-efficiency switching circuits.
These features make the IRF1310NSTRLPBF an excellent choice for a variety of electronic designs.
Package
Pinout
1. Gate (G) - Pin 1: Controls the MOSFET operation (turns it on/off).
2. Drain (D) - Pin 2: The terminal through which the load current flows when the MOSFET is on.
3. Source (S) - Pin 3: Connects to ground or the negative side of the load.
4. Gate (G) - Pin 4 (additional gate terminal for dual-gate configurations).
5. Drain (D) - Pin 5 (additional drain terminal for specific applications).
6. Source (S) - Pin 6 (additional source terminal for enhanced performance).
7. Gate (G) - Pin 7 (for external control signal in certain designs).
8. Source (S) - Pin 8 (for power management).
The IRF1310NSTRLPBF is known for its low on-resistance and high-speed switching capabilities, making it suitable for power management, motor control, and other applications requiring efficient switching.
Manufacturer
Application
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