IRF3205STRLPBF

이미지는 참조용만

IRF3205STRLPBF

IRF3205 - 12V-300V N-CHANNEL POW

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 110A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8mOhm @ 62A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 146 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3247 pF @ 25 V
PowerDissipation(Max) 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

개요

Description

The IRF3205STRLPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance (RDS(on)) of about 8 mΩ, enabling efficient power management with minimal heat generation. The device is ideal for use in power supplies, motor drivers, and DC-DC converters.
With a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) up to 110A, the IRF3205 is suitable for demanding applications. It has a gate threshold voltage (VGS(th)) ranging from 2V to 4V, allowing it to be driven directly by logic-level signals.
The package type is typically D2PAK, which aids in thermal dissipation due to its larger surface area. Its robust performance under varying conditions makes it a popular choice in automotive, industrial, and consumer electronics.
Overall, the IRF3205STRLPBF combines high efficiency and reliability, making it an excellent option for engineers looking for effective solutions in power electronics.

Features

The IRF3205STRLPBF is a N-channel MOSFET specifically designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-to-source voltage (V_DS) of 55V.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 110A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance of approximately 8 mΩ at V_GS = 10V, which ensures minimal power loss during operation.
4. Gate Threshold Voltage: Gate-to-source threshold voltage (V_GS(th)) ranges from 2V to 4V, providing flexibility in gate drive requirements.
5. Fast Switching: Capable of high-speed switching, enhancing efficiency in power supply circuits and motor control applications.
6. Thermal Performance: Robust thermal characteristics with a maximum junction temperature of 150°C, allowing reliable operation under demanding conditions.
7. Package: Available in a D2PAK package, which provides good thermal management and ease of mounting.
These features make the IRF3205STRLPBF suitable for various applications, including power converters, inverters, and motor drivers.

Package

The IRF3205STRLPBF is packaged in a TO-220 form factor. This package is designed for high-power applications and provides excellent thermal performance and heat dissipation capabilities.

Pinout

The IRF3205STRLPBF is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IRF3205STRLPBF is known for its low on-resistance and high current handling capability, making it suitable for various applications, including power management and switching applications in circuits.

Manufacturer

The manufacturer of the IRF3205STRLPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany that specializes in a wide range of electronic components. The company focuses on products for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, providing innovative solutions to enhance energy efficiency and performance in electronic systems.

Application

The IRF3205STRLPBF is a high-speed N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor drives, and power inverters. Its low on-resistance and high current handling capabilities make it suitable for automotive, industrial, and consumer electronics applications where efficient switching and thermal performance are essential.

Equivalent

The IRF3205STRLPBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75 (STMicroelectronics)
2. FQP75N06 (Fairchild)
3. AO3400 (Alpha & Omega Semiconductor)
4. BSC090N06LS (Infineon)
Always verify specifications such as voltage, current, RDS(on), and package type to ensure compatibility for your application.

배송

배송 방법We

DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.


배송 요금 참조 (DHL/FedEx):

DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.

FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.

등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.

지불

Payment Methods

지불 기간은 100% 사전 지불입니다.

현재, 우리는 아래 지불 방법만 받아들입니다.:

1. PayPal

2. 신용/직불 카드

3. 전선 전송