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IRF3710PBF
MOSFET N-CH 100V 57A TO220AB
- 제조업체
- Mfr.부분 #IRF3710PBF
- 패키지 TO-220-3
- 데이터시트 IRF3710PBF DataSheet
- 재고 있음7782
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사양
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 57A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 23mOhm @ 28A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 130 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3130 pF @ 25 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
This MOSFET is commonly used in various applications, including DC-DC converters, motor control, and power management systems. Its ability to switch rapidly makes it suitable for high-frequency applications, while its thermal characteristics enable effective heat dissipation. The IRF3710PBF is packaged in a TO-220 format, facilitating easy heat sink attachment. It is also RoHS compliant, ensuring it meets environmental regulations.
Overall, the IRF3710PBF is a reliable choice for designers seeking high-performance power management solutions.
Features
1. Voltage Rating: Maximum drain-source voltage (Vds) of 30V.
2. Current Handling: Continuous drain current (Id) of up to 80A at a specified temperature.
3. Low Rds(on): On-resistance of approximately 0.0085 ohms, ensuring minimal power loss during operation.
4. Fast Switching: Suitable for fast switching applications, enhancing efficiency in power conversion circuits.
5. Thermal Characteristics: Equipped with a robust thermal design, allowing for effective heat dissipation.
6. Package: Available in a TO-220 package, facilitating easy mounting on heat sinks for improved thermal management.
7. Applications: Ideal for use in power supplies, motor drivers, and other high-speed switching applications.
These features make the IRF3710PBF suitable for demanding tasks in both consumer and industrial electronic designs.
Package
Pinout
1. Gate (G) - Controls the MOSFET operation (turns it on/off).
2. Drain (D) - The terminal through which the main current flows when the device is turned on.
3. Source (S) - Connects to the ground or the negative side of the power supply.
The pin configuration is as follows:
- Pins 1 to 4: Gate and Drain connections.
- Pins 5 to 8: Source and Drain connections.
The IRF3710PBF is designed for high-speed switching and efficient power management in applications like DC-DC converters and motor drives. Its low R_DS(on) allows for reduced power loss, making it suitable for various power applications.
Manufacturer
Application
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